H10P 14/3214
Being group iiia-va semiconductors
Official title: {being Group IIIA-VA semiconductors}
H10P14/3214 (Being group iiia-va semiconductors) appears on 3,970 US grants and 4,409 published applications in this corpus.
Search patents in H10P- Granted patents
- 3,970
- Published applications
- 4,409
- Assignees
- 936
- Inventors
- 5,685
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 13 | 0 |
| 1977 | 13 | 0 |
| 1978 | 12 | 0 |
| 1979 | 9 | 0 |
| 1980 | 9 | 0 |
| 1981 | 9 | 0 |
| 1982 | 1 | 0 |
| 1983 | 3 | 0 |
| 1984 | 6 | 0 |
| 1985 | 6 | 0 |
| 1986 | 5 | 0 |
| 1987 | 13 | 0 |
| 1988 | 11 | 0 |
| 1989 | 33 | 0 |
| 1990 | 27 | 0 |
| 1991 | 36 | 0 |
| 1992 | 37 | 0 |
| 1993 | 32 | 0 |
| 1994 | 32 | 0 |
| 1995 | 37 | 0 |
| 1996 | 19 | 0 |
| 1997 | 26 | 0 |
| 1998 | 33 | 0 |
| 1999 | 35 | 0 |
| 2000 | 35 | 0 |
| 2001 | 54 | 46 |
| 2002 | 71 | 137 |
| 2003 | 95 | 116 |
| 2004 | 99 | 108 |
| 2005 | 88 | 126 |
| 2006 | 81 | 141 |
| 2007 | 70 | 143 |
| 2008 | 68 | 150 |
| 2009 | 98 | 140 |
| 2010 | 123 | 203 |
| 2011 | 126 | 247 |
| 2012 | 195 | 275 |
| 2013 | 186 | 231 |
| 2014 | 246 | 275 |
| 2015 | 258 | 253 |
| 2016 | 254 | 240 |
| 2017 | 209 | 220 |
| 2018 | 183 | 184 |
| 2019 | 201 | 189 |
| 2020 | 164 | 149 |
| 2021 | 118 | 177 |
| 2022 | 102 | 162 |
| 2023 | 108 | 161 |
| 2024 | 125 | 167 |
| 2025 | 95 | 116 |
| 2026 | 61 | 53 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Quantum heterostructures, related devices and methods for manufacturing the same29 Sep 2026US 12,751,060 B2Ecole Polytechnique de Montreal
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Diffusion barrier for semiconductor device and method29 Sep 2026US 12,751,270 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device, inspection apparatus of semiconductor device, and method for inspecting semiconductor device22 Sep 2026US 12,745,576 B2Kabushiki Kaisha Toshiba
- Method of manufacturing semiconductor device15 Sep 2026US 12,740,345 B2Sumitomo Electric Device Innovations, Inc.
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Diffusion barrier for semiconductor device and method1 Oct 2026US 2026/0305302 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon nitride etching composition and method17 Sep 2026US 2026/0275191 A1Entegris, Inc.
- Ferroelectric iii-nitride heterostructures27 Aug 2026US 2026/0255642 A1The Regents of the University of Michigan
- Deposition of ain on a silicon substrate and gan semiconductor transition layer structure6 Aug 2026US 2026/0231701 A1Epinovatech AB
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method of fabricating epitaxial structures827US 8,455,290 B2Masimo Semiconductor, Inc. · 2013
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Reduction of dislocations in a heteroepitaxial semiconductor structure513US 6,010,937 ASpire Corporation · 2000