H10P 14/3216
Nitrides
Official title: {Nitrides}
H10P14/3216 (Nitrides) appears on 3,026 US grants and 3,794 published applications in this corpus.
Search patents in H10P- Granted patents
- 3,026
- Published applications
- 3,794
- Assignees
- 750
- Inventors
- 4,211
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 4 | 0 |
| 1993 | 4 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 3 | 0 |
| 1997 | 6 | 0 |
| 1998 | 7 | 0 |
| 1999 | 13 | 0 |
| 2000 | 19 | 0 |
| 2001 | 37 | 37 |
| 2002 | 57 | 114 |
| 2003 | 80 | 94 |
| 2004 | 81 | 91 |
| 2005 | 78 | 101 |
| 2006 | 64 | 124 |
| 2007 | 57 | 116 |
| 2008 | 57 | 126 |
| 2009 | 75 | 115 |
| 2010 | 107 | 179 |
| 2011 | 108 | 203 |
| 2012 | 165 | 251 |
| 2013 | 167 | 208 |
| 2014 | 222 | 246 |
| 2015 | 229 | 219 |
| 2016 | 210 | 185 |
| 2017 | 164 | 177 |
| 2018 | 151 | 159 |
| 2019 | 170 | 159 |
| 2020 | 139 | 124 |
| 2021 | 101 | 155 |
| 2022 | 93 | 144 |
| 2023 | 89 | 148 |
| 2024 | 115 | 155 |
| 2025 | 85 | 113 |
| 2026 | 56 | 51 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Diffusion barrier for semiconductor device and method29 Sep 2026US 12,751,270 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device, inspection apparatus of semiconductor device, and method for inspecting semiconductor device22 Sep 2026US 12,745,576 B2Kabushiki Kaisha Toshiba
- Method of manufacturing semiconductor device15 Sep 2026US 12,740,345 B2Sumitomo Electric Device Innovations, Inc.
- Semiconductor structure comprising first III-V compound layerand second III-V compound layer and method of manufacture8 Sep 2026US 12,733,193 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Diffusion barrier for semiconductor device and method1 Oct 2026US 2026/0305302 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon nitride etching composition and method17 Sep 2026US 2026/0275191 A1Entegris, Inc.
- Ferroelectric iii-nitride heterostructures27 Aug 2026US 2026/0255642 A1The Regents of the University of Michigan
- Deposition of ain on a silicon substrate and gan semiconductor transition layer structure6 Aug 2026US 2026/0231701 A1Epinovatech AB
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates497US 6,177,688 B1North Carolina State University · 2001
- Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations469US 9,929,011 B2Ultratech, Inc. · 2018