H10P 14/3218
Phosphides
Official title: {Phosphides}
H10P14/3218 (Phosphides) appears on 423 US grants and 329 published applications in this corpus.
Search patents in H10P- Granted patents
- 423
- Published applications
- 329
- Assignees
- 188
- Inventors
- 869
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 3 | 0 |
| 1978 | 5 | 0 |
| 1979 | 5 | 0 |
| 1980 | 3 | 0 |
| 1981 | 3 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 6 | 0 |
| 1989 | 10 | 0 |
| 1990 | 11 | 0 |
| 1991 | 15 | 0 |
| 1992 | 12 | 0 |
| 1993 | 8 | 0 |
| 1994 | 11 | 0 |
| 1995 | 11 | 0 |
| 1996 | 7 | 0 |
| 1997 | 6 | 0 |
| 1998 | 9 | 0 |
| 1999 | 10 | 0 |
| 2000 | 10 | 0 |
| 2001 | 9 | 8 |
| 2002 | 6 | 11 |
| 2003 | 7 | 13 |
| 2004 | 9 | 9 |
| 2005 | 5 | 10 |
| 2006 | 9 | 14 |
| 2007 | 1 | 19 |
| 2008 | 13 | 13 |
| 2009 | 11 | 11 |
| 2010 | 6 | 12 |
| 2011 | 10 | 13 |
| 2012 | 13 | 13 |
| 2013 | 7 | 13 |
| 2014 | 12 | 12 |
| 2015 | 11 | 12 |
| 2016 | 15 | 27 |
| 2017 | 22 | 21 |
| 2018 | 20 | 13 |
| 2019 | 15 | 19 |
| 2020 | 16 | 12 |
| 2021 | 10 | 13 |
| 2022 | 8 | 9 |
| 2023 | 16 | 21 |
| 2024 | 9 | 7 |
| 2025 | 5 | 2 |
| 2026 | 1 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Multi-regional epitaxial growth and related systems and articles16 Jun 2026US 12,660,519 B2Massachusetts Institute of Technology
- Single crystal semiconductor structure and method of manufacturing the same7 Oct 2025US 12,437,988 B2iBeam Materials, Inc.
- Layered structure with deformation control layer2 Sep 2025US 12,408,503 B2IQE plc
- Co-integrated resonant tunneling diode and field effect transistor26 Aug 2025US 12,402,398 B2International Business Machines Corporation
- Single crystal semiconductor structure and method of fabricating the same17 Jun 2025US 12,336,247 B2iBeam Materials, Inc.
- Layered semiconductor structures and methods for fabricating layered semiconductor structures18 Jun 2026US 2026/0173525 A1Nokia Networks France
- Method for manufacturing semiconductor device14 May 2026US 2026/0136847 A1Hamamatsu Photonics K.K.
- Single crystal semiconductor structure and method of manufacturing the same4 Dec 2025US 2025/0374626 A1iBeam Materials, Inc.
- Impure indium phosphide semiconductor substrate30 Oct 2025US 2025/0338525 A1QUALCOMM Incorporated
- Semiconductor structure and manufacturing method thereof21 Nov 2024US 2024/0387242 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of fabricating epitaxial structures827US 8,455,290 B2Masimo Semiconductor, Inc. · 2013
- Reduction of dislocations in a heteroepitaxial semiconductor structure513US 6,010,937 ASpire Corporation · 2000
- Method of producing sheets of crystalline material345US 4,727,047 AMassachusetts Institute of Technology · 1988
- Semiconductor device using whiskers265US 5,362,972 AHitachi, Ltd. · 1994
- Optical annealing method for semiconductor layer and method for producing semiconductor device employing the same semiconductor layer263US 5,312,771 ACanon Kabushiki Kaisha · 1994