Single crystal semiconductor structure and method of manufacturing the same
AssigneesSamsung Electronics Co., Ltd., iBeam Materials, Inc.
InventorsJunhee Choi, Vladmir Matias, Joohun Han
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Abstract
A single crystal semiconductor includes a strain compensation layer; an amorphous substrate disposed on the strain compensation layer; a lattice matching layer disposed on the amorphous substrate and including two or more single crystal layers; and a single crystal semiconductor layer disposed on the lattice matching layer, the lattice matching layer including a direction control film disposed on the amorphous substrate and including a single crystal structure, and a buffer layer including a material different from that of the direction control film, the buffer layer being disposed on the direction control film and including a single crystal structure.
Claims18
A single crystal semiconductor structure comprising:
- a strain compensation layer;
- an amorphous substrate on the strain compensation layer;
- a lattice matching layer on the amorphous substrate, the lattice matching layer comprising two or more single crystal layers;
- a single crystal semiconductor layer on the lattice matching layer;
- and
- a mask pattern between the single crystal semiconductor layer and the lattice matching layer,
- wherein the lattice matching layer comprises a direction control film disposed on the amorphous substrate, the direction control film comprising a single crystal structure, and a buffer layer comprising a material different from a material of the direction control film, the buffer layer being disposed on the direction control film and comprising a single crystal structure,
- wherein the mask pattern comprises holes exposing the lattice matching layer, and
- wherein the single crystal semiconductor layer is disposed on the mask pattern and fills the holes.
Dependencies are inferred from the claim text.