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US 12,336,247 B2Granted
Single crystal semiconductor structure and method of fabricating the same
AssigneesSamsung Electronics Co., Ltd., iBeam Materials, Inc.
InventorsJunhee Choi, Joohun Han, Vladimir Matias
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Abstract
A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the thin orienting film is a single crystal thin film, and the thin orienting film has a non-zero thickness that is equal to or less than 10 times a critical thickness hc.
Claims9
A single crystal semiconductor structure comprising:
- an amorphous substrate;
- a single crystal film formed directly on the amorphous substrate;
- a single crystal semiconductor layer formed directly on the single crystal film, the single crystal semiconductor layer comprising a lower single crystal layer and an upper single crystal layer, and
- a mask pattern between the lower single crystal layer and the upper single crystal layer,
- wherein a lattice constant of the single crystal film is different from a lattice constant of the single crystal semiconductor layer.
2 more elements
Dependencies are inferred from the claim text.