Optical annealing method for semiconductor layer and method for producing semiconductor device employing the same semiconductor layer

A method for producing a semiconductor device comprising the steps of:

• (i) providing a substrate comprising sequentially a base plate, a semiconductor layer on said base plate, an insulating layer on said semiconductor layer, and a light absorbing layer on said insulating layer;
• (ii) irradiating said substrate with incoherent light for annealing said semiconductor layer wherein said base plate and said semiconductor layer comprise a material transmitting said incoherent light and said light absorbing layer comprises a material absorbing said incoherent light and generating thermal energy to indirectly anneal said semiconductor layer;
• (iii) subsequent to the step of irradiating, removing a portion of said light absorbing layer, thereby forming a gate electrode comprising the remaining portion of said light absorbing layer, and removing a portion of said insulating layer, thereby forming a gate insulating film comprising the remaining portion of said insulating layer;
• and
• (iv) forming a source region and a drain region.