H10P 14/3222
Antimonides
Official title: {Antimonides}
H10P14/3222 (Antimonides) appears on 139 US grants and 140 published applications in this corpus.
Search patents in H10P- Granted patents
- 139
- Published applications
- 140
- Assignees
- 79
- Inventors
- 258
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 3 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 4 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 2 |
| 2002 | 1 | 2 |
| 2003 | 2 | 1 |
| 2004 | 1 | 2 |
| 2005 | 2 | 6 |
| 2006 | 4 | 3 |
| 2007 | 2 | 3 |
| 2008 | 2 | 8 |
| 2009 | 6 | 7 |
| 2010 | 6 | 2 |
| 2011 | 5 | 4 |
| 2012 | 4 | 6 |
| 2013 | 4 | 9 |
| 2014 | 3 | 10 |
| 2015 | 10 | 12 |
| 2016 | 11 | 15 |
| 2017 | 10 | 6 |
| 2018 | 7 | 2 |
| 2019 | 3 | 7 |
| 2020 | 3 | 4 |
| 2021 | 5 | 5 |
| 2022 | 6 | 3 |
| 2023 | 10 | 18 |
| 2024 | 5 | 2 |
| 2025 | 2 | 1 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Architecture for InGaAs/GaAsSb superlattices on an InP substrate26 May 2026US 12,641,911 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Layered structure with deformation control layer2 Sep 2025US 12,408,503 B2IQE plc
- Sag nanowire growth with a planarization process22 Apr 2025US 12,283,483 B2Microsoft Technology Licensing, LLC
- Optimized heteroepitaxial growth of semiconductors3 Dec 2024US 12,157,956 B2The United States of America as represented by the Secretary of the Air Force
- Semiconductor light-emitting element and method of producing the same22 Oct 2024US 12,125,702 B2Dowa Electronics Materials Co., Ltd.
- A Method of Manufacturing Group III-V Based Semiconductor Materials Comprising Strain Relaxed Buffers Providing Possibility for Lattice Constant Adjustment When Growing on (111)SI Substrates5 Jun 2025US 2025/0185408 A1Integrated Solar
- Sag nanowire growth with a planarization process23 May 2024US 2024/0170286 A1Microsoft Technology Licensing, LLC
- Architecture for ingaas/gaassb superlattices on an inp substrate4 Apr 2024US 2024/0113241 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Optimized Heteroepitaxial Growth of Semiconductors2 Nov 2023US 2023/0352302 A1Government of the United States as Represented by the Secretary of the Air Force
- Semiconductor light-emitting element and method of producing the same18 May 2023US 2023/0155061 A1Dowa Electronics Materials Co., Ltd.
Most cited
By later US patents
- Method for forming crystalline semiconductor layers, a method for fabricating thin film transistors, and method for fabricating solar cells and active matrix liquid crystal devices99US 6,066,516 ASeiko Epson Corporation · 2000
- Substrate structures for InP-based devices79US 4,963,949 AThe United States of America as represented of the United States Department of Energy · 1990
- High mobility multilayered heterojunction devices employing modulated doping76US 4,163,237 ABell Telephone Laboratories, Incorporated · 1979
- Method of making high mobility multilayered heterojunction devices employing modulated doping61US 4,194,935 ABell Telephone Laboratories, Incorporated · 1980
- Method for forming crystalline semiconductor layers, a method for fabricating thin film transistors, and a method for fabricating solar cells and active matrix liquid crystal devices40US 6,455,360 B1Seiko Epson Corporation · 2002