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US 2023/0155061 A1Published application
Semiconductor light-emitting element and method of producing the same
AssigneeDowa Electronics Materials Co., Ltd.
InventorsOsamu TANAKA, Yoshitaka KADOWAKI
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Abstract
Provided is a semiconductor light-emitting element that exhibits a light emission spectrum in which a single peak is obtained by controlling multi peaks. In the semiconductor light-emitting element having a second conductivity type cladding layer on the light extraction side, the arithmetic mean roughness Ra of a surface of the light extraction surface of the second conductivity type cladding layer is 0.07 μm or more and 0.7 μm or less, and the skewness Rsk of the surface is a positive value.
Claims12
A semiconductor light-emitting element comprising:
- a substrate;
- a reflective layer on the substrate;
- a first conductivity type cladding layer made of an InAsSbP-based III-V compound semiconductor containing at least In and As on the reflective layer;
- an active layer with a center emission wavelength of 3400 nm or more and 4500 nm or less on the first conductivity type cladding layer;
- and
- a second conductivity type cladding layer made of an InAsSbP-based III-V compound semiconductor containing at least In and As on the active layer,
- wherein the second conductivity type cladding layer is on the light extraction side, and
- an arithmetic average roughness Ra of a surface of a light extraction surface of the second conductivity type cladding layer is 0.07 μm or more and 0.7 μm or less, and a skewness Rsk of the surface is a positive value.
5 more elements
A semiconductor light-emitting element comprising:
- a support substrate;
- a metal bonding layer on the support substrate;
- a reflective layer on the metal bonding layer;
- a first conductivity type cladding layer made of an InAsSbP-based III-V compound semiconductor containing at least In and As on the reflective layer;
- an active layer with a center emission wavelength of 3400 nm or more and 4500 nm or less on the first conductivity type cladding layer;
- and
- a second conductivity type cladding layer made of an InAsSbP-based III-V compound semiconductor containing at least In and As on the active layer,
- wherein the second conductivity type cladding layer is on the light extraction side, and
- an arithmetic average roughness Ra of a surface of a light extraction surface of the second conductivity type cladding layer is 0.07 μm or more and 0.7 μm or less, and a skewness Rsk of the surface is a positive value.
6 more elements
A method of producing a semiconductor light-emitting element, the method comprising:
- a first step of sequentially forming a reflective layer, a first conductivity type cladding layer made of an InAsSbP-based III-V compound semiconductor containing at least In and As, an active layer with a center emission wavelength of 3400 nm or more and 4500 nm or less, and a second conductivity type cladding layer made of an InAsSbP-based III-V compound semiconductor containing at least In and As, on a substrate;
- and
- a second step of performing surface roughening so that an arithmetic average roughness Ra of a surface of a light extraction surface of the second conductivity type cladding layer is 0.07 μm or more and 0.7 μm or less, and a skewness Rsk of the surface is a positive value.
A method of producing a semiconductor light-emitting element, the method comprising:
- a semiconductor layer formation step of sequentially forming an etching stop layer made of a GaAsSb-based III-V semiconductor containing at least Ga and Sb, a second conductivity type cladding layer made of an InAsSbP-based III-V compound semiconductor containing at least In and As, an active layer with a center emission wavelength of 3400 nm or more and 4500 nm or less, and a first conductivity type cladding layer made of an InAsSbP-based III-V compound semiconductor containing at least In and As, on a growth substrate;
- a reflective layer formation step of forming a reflective layer that reflects light emitted from the active layer on the first conductivity type cladding layer;
- a bonding step of bonding the reflective layer to the support substrate with at least a metal bonding layer therebetween;
- a substrate removal step of removing the growth substrate;
- and
- a surface roughening step of performing roughening so that an arithmetic average roughness Ra of a surface of a light extraction surface of the second conductivity type cladding layer is 0.07 μm or more and 0.7 μm or less, and a skewness Rsk of the surface is a positive value.
3 more elements
A method of producing a semiconductor light-emitting element, the method comprising:
- a first step of sequentially forming a reflective layer, a first conductivity type cladding layer made of an InAsSbP-based III-V compound semiconductor containing at least In and As, an active layer with a center emission wavelength of 3400 nm or more and 4500 nm or less, and a second conductivity type cladding layer made of an InAsSbP-based III-V compound semiconductor containing at least In and As, on a substrate;
- and
- a second step of performing surface roughening on a light extraction surface of the second conductivity type cladding layer using nitric acid.
Dependencies are inferred from the claim text.