A Method of Manufacturing Group III-V Based Semiconductor Materials Comprising Strain Relaxed Buffers Providing Possibility for Lattice Constant Adjustment When Growing on (111)SI Substrates

A method of manufacturing a semiconductor material, comprising the steps of:

• (i) providing a silicon substrate having a thickness within an approximate range of 40-1000 μm and a surface on a (111) crystal plane or on less than 5 degrees off of the (111) crystal plane;
• (ii) growing a first layer comprising III-V materials on top of the silicon substrate, wherein the layer is grown leaving multiple thicker grown islands connected via thinner sections of the first layer, the first layer having a thickness within an approximate range of 1-100 nm, and the thicker grown islands being grown with a gradient in their lattice constant providing a lattice constant of the first layer being different from the lattice of the final grown material, the difference in lattice constant between the first layer and the final grown material resulting in defect planes parallel to the (111) surface located below the grown islands, the defect planes providing strain relaxation of the final grown material;
• and
• (iii) growing a second layer comprising III-V materials and having a thickness within an approximate range of 1-100 nm, thereby reducing a surface roughness compared to the final surface of the first layer.