H10P 14/3241
Being conductive materials
Official title: {being conductive materials}
H10P14/3241 (Being conductive materials) appears on 789 US grants and 877 published applications in this corpus.
Search patents in H10P- Granted patents
- 789
- Published applications
- 877
- Assignees
- 439
- Inventors
- 1,941
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 4 | 0 |
| 1981 | 3 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 4 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 4 | 0 |
| 1990 | 2 | 0 |
| 1991 | 5 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 5 | 0 |
| 1995 | 5 | 0 |
| 1996 | 8 | 0 |
| 1997 | 4 | 0 |
| 1998 | 13 | 0 |
| 1999 | 11 | 0 |
| 2000 | 22 | 0 |
| 2001 | 14 | 4 |
| 2002 | 13 | 31 |
| 2003 | 21 | 24 |
| 2004 | 28 | 19 |
| 2005 | 23 | 20 |
| 2006 | 12 | 36 |
| 2007 | 10 | 32 |
| 2008 | 14 | 24 |
| 2009 | 15 | 21 |
| 2010 | 18 | 38 |
| 2011 | 36 | 54 |
| 2012 | 39 | 67 |
| 2013 | 44 | 59 |
| 2014 | 60 | 69 |
| 2015 | 47 | 57 |
| 2016 | 40 | 39 |
| 2017 | 27 | 31 |
| 2018 | 21 | 36 |
| 2019 | 38 | 45 |
| 2020 | 41 | 37 |
| 2021 | 27 | 28 |
| 2022 | 24 | 32 |
| 2023 | 20 | 22 |
| 2024 | 16 | 23 |
| 2025 | 25 | 22 |
| 2026 | 11 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Method of increasing sensitivity and limits of detection and controlling fluid flow over sensor and sensor array6 Oct 2026US 12,757,650 B2The United States of America as represented by the Secretary of the Air Force
- Substrate treatment method, substrate treatment apparatus, and computer storage medium8 Sep 2026US 12,733,422 B2Tokyo Electron Limited
- Nitride laminate and manufacturing method of the same18 Aug 2026US 12,713,843 B2Nitto Denko Corporation
- Hybrid component with silicon and wide bandgap semiconductor material in silicon recess7 Jul 2026US 12,677,458 B2Texas Instruments Incorporated
- Heteroepitaxial growth method of compound semiconductor materials on multi-oriented semiconductor substrates and devices17 Sep 2026US 2026/0282771 A1King Abdullah University of Science and Technology
- Low temperature n-type contact epi formation27 Aug 2026US 2026/0255645 A1APPLIED Materials.Inc.
- Substrate retainer16 Jul 2026US 2026/0201560 A1Black Semiconductor Netherlands B.V.
- Semiconductor substrate, template substrate, and method and apparatus for manufacturing template substrate28 May 2026US 2026/0150687 A1KYOCERA Corporation
- Underlying substrate, single crystal diamond laminate substrate and method for producing them5 Mar 2026US 2026/0068551 A1Shin-Etsu Chemical Co., Ltd.
Most cited
By later US patents
- LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film3,969US 7,323,356 B2Japan Science and Technology Agency · 2008
- Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates390US 5,275,851 AThe Penn State Research Foundation · 1994
- Semiconductor device having improved crystal orientation273US 5,481,121 ASemiconductor Energy Laboratory Co.Ltd. · 1996
- Method for optimal crystallization to obtain high electrical performance from chalcogenides265US 5,837,564 AMicron Technology, Inc. · 1998
- Optical annealing method for semiconductor layer and method for producing semiconductor device employing the same semiconductor layer263US 5,312,771 ACanon Kabushiki Kaisha · 1994