Method for optimal crystallization to obtain high electrical performance from chalcogenides
AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, Alan R. Reinberg
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Abstract
A method of fabricating a chalcogenide memory cell wherein a layer of chalcogenide material is deposited in an amorphous state. The layer of amorphous chalcogenide material is then etched to its final geometry while maintaining its amorphous structure. The final geometry of the chalcogenide material is then annealed thereby transforming it to a crystalline form.
Claims15
A method of fabricating a plurality of individual chalcogenide elements, comprising the steps of:
- applying a layer of amorphous chalcogenide material onto a substrate;
- etching said layer of amorphous chalcogenide material to form a memory array comprising a plurality of individual amorphous chalcogenide elements;
- and
- transforming all of said individual amorphous chalcogenide elements in the memory array to a crystalline state at once.
A method of fabricating a plurality of chalcogenide memory cells, comprising the steps of:
- forming a plurality of current controlling devices on a substrate;
- applying a plurality of first electrodes on said respective current controlling devices;
- applying a layer of amorphous chalcogenide material onto said first electrodes;
- etching said layer of amorphous chalcogenide material to form a memory array comprising a plurality of amorphous chalcogenide elements;
- applying a plurality of second electrodes on said plurality of respective chalcogenide elements;
- and
- annealing all of said amorphous chalcogenide elements in the memory array to a crystalline state simultaneously.
A method of fabricating a plurality of individual chalcogenide elements, comprising the steps of:
- forming a memory array comprising a plurality of individual chalcogenide elements on a substrate, said plurality of individual chalcogenide elements being formed in an amorphous state;
- and
- annealing all of said plurality of individual chalcogenide elements in the memory array simultaneously to transform said plurality of individual amorphous chalcogenide elements from said amorphous state to a crystalline state.
A method of fabricating a plurality of individual chalcogenide elements, consisting essentially of the steps of:
- forming a memory array comprising a plurality of individual chalcogenide elements on a substrate, said plurality of individual chalcogenide elements being formed in an amorphous state;
- and
- annealing all of said plurality of individual chalcogenide elements in the memory array simultaneously to transform said plurality of individual amorphous chalcogenide elements from said amorphous state to a crystalline state.
A method of fabricating a plurality of chalcogenide memory cells, comprising the steps of:
- forming a memory array comprising a plurality of individual elements on a substrate, each of said individual elements comprising:
- a current controlling device, a first electrode coupled to said current controlling device, a layer of amorphous chalcogenide coupled to said first electrode, and a second electrode coupled to said layer of amorphous chalcogenide;
- and
- annealing said layer of amorphous chalcogenide of each of said plurality of individual elements to transform each of said plurality of individual elements in the memory array to a crystalline state simultaneously.
A method of fabricating a plurality of chalcogenide memory cells, comprising the steps of:
- forming a memory array comprising a plurality of individual elements on a substrate, each of said individual elements comprising:
- a current controlling device, a first electrode coupled to said current controlling device, a layer of amorphous chalcogenide coupled to said first electrode, and a second electrode coupled to said layer of amorphous chalcogenide;
- and
- transforming said layer of amorphous chalcogenide of each of said plurality of individual elements in the memory array to a crystalline state at once.
Dependencies are inferred from the claim text.