Semiconductor device having improved crystal orientation

A semiconductor device, comprising:

• a substrate;
• and
• a plurality of thin film transistors formed on the substrate,
• wherein a part of the plurality of thin film transistors is provided as a peripheral circuit section of an active matrix type liquid crystal display and the other part of the plurality of thin film transistors is provided as a picture element section of the active matrix type liquid crystal display, and
• the thin film transistors provided as the peripheral circuit section have a crystalline silicon film having a crystal growth direction in a direction parallel to a surface of the substrate and the thin film transistors provided as the picture element section have a crystalline silicon film having a crystal growth direction in a direction vertical to the surface of the substrate.

An active matrix type liquid crystal display, comprising:

• a picture element section having a plurality of picture element electrodes;
• and
• driving circuit means for driving each of the picture element electrodes,
• wherein the picture element section and the driving circuit means are composed of thin film transistors each having a substrate, and the thin film transistors composing the picture element section have a crystalline silicon film having a crystal growth direction approximately vertical to the surface of the substrate and the thin film transistors composing the driving circuit means have a crystalline silicon film having a crystal growth direction approximately parallel to the surface of the substrate.

An active matrix type liquid crystal display comprising:

• a substrate;
• a plurality of picture element electrodes each having a crystalline silicon region having a crystal growth direction approximately vertical to the substrate;
• and
• a plurality of driving circuit means for driving the picture element electrodes, the plurality of driving circuit means each having a crystalline silicon region having a crystal growth direction approximately parallel to the substrate,
• wherein the picture element electrodes and the driving circuit means are formed on the substrate.

A semiconductor device comprising:

• a substrate;
• at least one first thin film transistor which is formed on the substrate and has a first crystalline silicon region having a crystal growth direction approximately normal to the substrate;
• and
• at least one second thin film transistor which is formed on the substrate and has a second crystalline silicon region having a crystal growth direction approximately parallel to the substrate.