H10P 14/3224
Being group iib-via semiconductors
Official title: {being Group IIB-VIA semiconductors}
H10P14/3224 (Being group iib-via semiconductors) appears on 387 US grants and 443 published applications in this corpus.
Search patents in H10P- Granted patents
- 387
- Published applications
- 443
- Assignees
- 237
- Inventors
- 935
- Latest grant
- 31 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 4 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 2 | 0 |
| 1992 | 4 | 0 |
| 1993 | 4 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 4 | 0 |
| 2000 | 9 | 0 |
| 2001 | 4 | 1 |
| 2002 | 8 | 11 |
| 2003 | 6 | 9 |
| 2004 | 7 | 20 |
| 2005 | 9 | 6 |
| 2006 | 10 | 14 |
| 2007 | 5 | 8 |
| 2008 | 7 | 15 |
| 2009 | 7 | 13 |
| 2010 | 10 | 27 |
| 2011 | 11 | 35 |
| 2012 | 20 | 23 |
| 2013 | 12 | 18 |
| 2014 | 26 | 40 |
| 2015 | 20 | 29 |
| 2016 | 26 | 21 |
| 2017 | 19 | 17 |
| 2018 | 23 | 13 |
| 2019 | 13 | 11 |
| 2020 | 6 | 14 |
| 2021 | 8 | 12 |
| 2022 | 14 | 15 |
| 2023 | 17 | 31 |
| 2024 | 19 | 19 |
| 2025 | 16 | 18 |
| 2026 | 5 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Atomic layer deposition using novel oxygen-containing precursors31 Mar 2026US 12,590,369 B2APPLIED Materials.Inc.
- Selective gas phase etch of silicon germanium alloys31 Mar 2026US 12,593,634 B2Tokyo Electron Limited
- Method for manufacturing semiconductor device24 Feb 2026US 12,563,843 B2Semiconductor Energy Laboratory Co.Ltd.
- High efficiency tandem solar cells and a method for fabricating same10 Feb 2026US 12,550,457 B2
- Interconnect line structures with metal chalcogenide cap materials13 Jan 2026US 12,525,488 B2Intel Corporation
- Semiconductor device and manufacturing method therefor16 Jul 2026US 2026/0206501 A1Jusung Engineering Co., Ltd.
- Method for the deposition of group iiia metal nitride films28 May 2026US 2026/0146314 A1Agc Glass Europe
- Epitaxial oxide transistor9 Apr 2026US 2026/0101611 A1Silanna UV Technologies Pte Ltd
- Epitaxial Oxide Integrated Circuit20 Nov 2025US 2025/0359399 A1Silanna UV Technologies Pte Ltd
- Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same9 Oct 2025US 2025/0318198 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device3,939US 7,049,190 B2Sanyo Electric Co., Ltd. · 2006
- Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device3,918US 7,501,293 B2Murata Manufacturing Co., Ltd. · 2009
- Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy145US 5,395,791 AMinnesota Mining and Manufacturing Company · 1995
- Semiconductor light-emitting device and method for manufacturing the same136US 7,132,691 B1Rohm Co., Ltd. · 2006
- Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same119US 6,392,257 B1Motorola, Inc. · 2002