Atomic layer deposition using novel oxygen-containing precursors

A semiconductor processing method comprising:

• i) providing a first precursor, wherein the first precursor comprises a first metal;
• ii) forming a first portion of a metal oxide material on a substrate;
• iii) providing a second precursor, wherein the second precursor comprises a second metal different from the first metal;
• and
• iv) contacting the first portion of the metal oxide material with the second precursor, wherein the first precursor, the second precursor, or both further comprise oxygen, and wherein the contacting forms a metal oxide material.

A semiconductor processing method comprising:

• providing a first precursor to a semiconductor processing chamber, wherein a substrate is disposed within a processing region of the semiconductor processing chamber, and wherein the first precursor comprises a first metal;
• contacting the substrate with the first precursor, wherein the contacting forms a first portion of a metal oxide material on the substrate;
• halting a flow of the first precursor;
• providing a second precursor to a semiconductor processing chamber, wherein the second precursor comprises a second metal different than the first metal;
• and
• contacting the first portion of the metal oxide material with the second precursor, wherein the first precursor or the second precursor comprises an alcohol, an alkoxide, a hydroxide, an acetylacetonate, an acetate, a formate, a nitrate, a sulfate, a phosphate, a phosphide, a carbonate, an oxide, an oxynitride, a perchlorate, an oxyhalide, a peroxide, an oxalate, or a phenolate, wherein the contacting forms a metal oxide material on the substrate, wherein the metal oxide material directly contacts the substrate, and wherein the first precursor and the second precursor do not include water, steam, ozone, molecular oxygen, oxygen-containing plasma, or hydrogen peroxide.