Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same

A semiconductor structure, comprising:

• a monocrystalline silicon substrate oriented in the (100) direction;
• an amorphous layer overlying the monocrystalline silicon substrate;
• a monocrystalline layer of (100) SrTiO3 overlying the amorphous layer and rotated by 45 degrees with respect to the monocrystalline silicon substrate, and
• a monocrystalline layer of GaAs overlying the monocrystalline layer of SrTiO3 and rotated by 45 degrees with respect to the monocrystalline layer of SrTiO3,
• wherein said amorphous layer and monocrystalline layer of SrTiO3 are prepared by a process comprising exposing the monocrystalline silicon substrate to strontium, titanium and oxygen while varying the partial pressure of oxygen to both 1) epitaxially grow a 2 to 100 nm thick ordered monocrystalline layer of (100) SrTiO3 having a crystal orientation rotated by 45° with respect to the (100) surface of the monocrystalline silicon substrate and 2) form an amorphous silicon oxide layer overlying the silicon substrate.