Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy
AssigneeMinnesota Mining and Manufacturing Company
InventorsHwa Cheng, James M. DePuydt, Michael A. Haase, Jun Qiu
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Abstract
A method for using atomic layer epitaxy (ALE) and/or migration enhanced epitaxy (MEE) to grow high efficiency quantum wells in II-VI laser diodes. The substrate and previously grown layers of the laser diode are heated to a temperature less than or equal to about 200.degree. C. in an MBE chamber. Sources of Cd, Zn, and Se are injected alternately into the chamber to grow a short-period strained-layer superlattice (SPSLS) quantum well layer including overlaying monolayers of Cd, Zn and Se. The quantum well layer is described by the notation [(CdSe).sub.m (ZnSe).sub.n ].sub.p where m, n and p are integers.
Claims20
A method for operating a molecular beam epitaxy (MBE) system having a chamber and sources of at least one group II element and at least one group VI element to grow a quantum well active layer on a substrate and any previously grown layers during the fabrication of a II-VI compound semiconductor electroluminescent device, including:
- heating the substrate and previously grown layers of the II-VI semiconductor device in the MBE chamber to a temperature less than 200.degree. C.;
- injecting alternately the group II and group VI elements into the MBE chamber;
- and
- growing a short-period strained-layer superlattice (SPSLS) quantum well layer in a form described by the notation [(X).sub.m (Y).sub.n ].sub.p where X and Y are binary II-VI semiconductor compounds and m, n and p are integers.
A method for operating a molecular beam epitaxy (MBE) system having a chamber and sources of Cd, Se and Zn to grow a quantum well active layer on a substrate and any previously grown layers during the fabrication of a II-VI compound semiconductor laser diode, including:
- heating the substrate and previously grown layers of the II-VI laser diode in the MBE chamber;
- injecting alternately the Cd, Se and Zn into the MBE chamber;
- and
- growing a short-period strained-layer superlattice (SPSLS) quantum well layer formed by overlaying monolayers of Cd, Se and Zn in a form described by the notation [CdSe).sub.m (ZnSe).sub.n ].sub.p where m, n and p are integers.
A method for operating a molecular beam epitaxy (MBE) system having a chamber and sources of Te, Se and Zn to grow a quantum well active layer on a substrate and any previously grown layers during the fabrication of a II-VI compound semiconductor laser diode, including:
- heating the substrate and previously grown layers of the II-VI laser diode in the MBE chamber to a temperature less than 200.degree. C.;
- injecting alternately the Te, Se and Zn into the MBE chamber;
- and
- growing a short-period strained-layer superlattice (SPSLS) quantum well layer formed by overlaying monolayers of Te, Se and Zn in a form described by the notation [(ZnTe).sub.m (ZnSe).sub.n ].sub.p where m, n and p are integers.
Dependencies are inferred from the claim text.