A solar cell structure, comprising:
- A plurality of solar cells having at least two cells, wherein the plurality of solar cells include,
- a first solar cell, and
- a second solar cell, wherein the first solar cell and the second solar cell include at least one of a p-n homojunction and a p-n heterojunction, and wherein the solar cell structure comprises a tunnel junction having a first tunnel junction, and a resonant tunneling structure having a first resonant tunneling structure,
- wherein the first tunnel junction and the first resonant tunneling structure are located between the first solar cell and the second solar cell, and
- wherein the first solar cell is comprised of a first p-type layer and a second n-type layer,
- wherein the first p-type layer and the second n-type layer are selected from one of single crystalline, poly-crystalline and nano-crystalline Si, and
- wherein the first p-type layer serves as a substrate to support the plurality of solar cells, and
- wherein the second solar cell comprises a third p-type layer and a fourth n-type layer, wherein the third p-type layer is selected from one of CdTe, ZnCdTe, CdGaInSe, and wherein the fourth n-type layer is selected from CdS, ZnCdS, CdGaInSe, and
- wherein the first tunnel junction is comprised of an n+-type layer and a p+-type layer, wherein the n+-type layer and the p+-type layer comprising the first tunnel junction are selected from one of Ge, Si, CdSeTe, and CdGaInSe, and wherein the n+-type layer is disposed on top of the second n-type layer of the first solar cell, and
- wherein the p+-type layer of the first tunnel junction is disposed with the first resonant tunneling structure,
- wherein the first resonant tunneling structure comprises a first quantum barrier layer, a second quantum well layer, and a third quantum barrier layer, and wherein the first quantum barrier layer is selected from one of ZnTe, ZnCdTe, ZnSTe, ZnSeTe, the second quantum well layer is selected from one of Ge, ZnCdTe, CdTe, and the third quantum barrier layer is selected from one of ZnTe,ZnCdTe,ZnSTe, and
- wherein the second solar cell includes a first p-type layer and a second n-type layer and is disposed on the third quantum barrier layer of the first resonant tunneling structure, and
- wherein the first p-type layer of the second solar cell is constructed from one of CdTe, ZnCdTe, and ZnSTe, and wherein the second n-type layer of the second solar cell is constructed from one of CdS, CdInGaSe and CdZnS, and
- wherein the second n-type layer of the second solar cell is disposed with an n+-type facilitator layer which is selected from one of CdS, CdInGaSe and CdZnS, and
- wherein a top Ohmic contact is formed on the n+-type facilitator layer in the form of a grid, and wherein the first solar cell includes a first p-Si layer which serves as the substrate, wherein the substrate includes a bottom Ohmic contact.