H10P 14/3242
Structure
Official title: {Structure}
H10P14/3242 (Structure) appears on 4,271 US grants and 4,910 published applications in this corpus.
Search patents in H10P- Granted patents
- 4,271
- Published applications
- 4,910
- Assignees
- 1,134
- Inventors
- 7,093
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 4 | 0 |
| 1978 | 5 | 0 |
| 1979 | 4 | 0 |
| 1980 | 4 | 0 |
| 1981 | 5 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 4 | 0 |
| 1985 | 9 | 0 |
| 1986 | 10 | 0 |
| 1987 | 20 | 0 |
| 1988 | 18 | 0 |
| 1989 | 30 | 0 |
| 1990 | 17 | 0 |
| 1991 | 23 | 0 |
| 1992 | 24 | 0 |
| 1993 | 26 | 0 |
| 1994 | 28 | 0 |
| 1995 | 41 | 0 |
| 1996 | 25 | 0 |
| 1997 | 25 | 0 |
| 1998 | 48 | 0 |
| 1999 | 37 | 0 |
| 2000 | 55 | 0 |
| 2001 | 63 | 42 |
| 2002 | 65 | 174 |
| 2003 | 121 | 251 |
| 2004 | 114 | 167 |
| 2005 | 121 | 169 |
| 2006 | 121 | 188 |
| 2007 | 109 | 186 |
| 2008 | 106 | 127 |
| 2009 | 115 | 119 |
| 2010 | 131 | 136 |
| 2011 | 107 | 180 |
| 2012 | 124 | 219 |
| 2013 | 157 | 215 |
| 2014 | 231 | 258 |
| 2015 | 221 | 230 |
| 2016 | 240 | 240 |
| 2017 | 218 | 227 |
| 2018 | 184 | 206 |
| 2019 | 225 | 247 |
| 2020 | 207 | 205 |
| 2021 | 154 | 193 |
| 2022 | 128 | 220 |
| 2023 | 150 | 256 |
| 2024 | 169 | 222 |
| 2025 | 137 | 174 |
| 2026 | 77 | 59 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Method of increasing sensitivity and limits of detection and controlling fluid flow over sensor and sensor array6 Oct 2026US 12,757,650 B2The United States of America as represented by the Secretary of the Air Force
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium15 Sep 2026US 12,740,347 B2Kokusai Electric Corporation
- Methods and devices for 3D NAND using silicon-and-halogen-containing materials8 Sep 2026US 12,733,164 B2APPLIED Materials.Inc.
- Film forming method and film forming apparatus10 Sep 2026US 2026/0265949 A1Tokyo Electron Limited
- Buffer structures for mitigation of defects at device interfaces and methods for preparing the same27 Aug 2026US 2026/0255891 A1Nanotronics Imaging, Inc.
- Systems and methods for tuning porous bandgaps to reduce thermal donor effects20 Aug 2026US 2026/0247673 A1IQE plc
- A method of forming a graphene layer structure and a graphene substrate6 Aug 2026US 2026/0226652 A1Paragraf Limited
- Methods for Transferring Graphene to Substrates and Related Lithographic Stacks and Laminates6 Aug 2026US 2026/0231697 A1Bard Access Systems, Inc.
Most cited
By later US patents
- Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device3,918US 7,501,293 B2Murata Manufacturing Co., Ltd. · 2009
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Method of manufacturing a substrate using an SiGe layer600US 6,607,948 B1Kabushiki Kaisha Toshiba · 2003
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004