H10P 14/3256
Microstructure
Official title: {Microstructure}
H10P14/3256 (Microstructure) appears on 660 US grants and 909 published applications in this corpus.
Search patents in H10P- Granted patents
- 660
- Published applications
- 909
- Assignees
- 331
- Inventors
- 1,607
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 5 | 0 |
| 1991 | 5 | 0 |
| 1992 | 5 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 3 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 5 | 0 |
| 1999 | 5 | 0 |
| 2000 | 8 | 0 |
| 2001 | 10 | 7 |
| 2002 | 16 | 40 |
| 2003 | 20 | 108 |
| 2004 | 17 | 27 |
| 2005 | 14 | 22 |
| 2006 | 13 | 33 |
| 2007 | 22 | 34 |
| 2008 | 18 | 17 |
| 2009 | 6 | 29 |
| 2010 | 29 | 24 |
| 2011 | 19 | 33 |
| 2012 | 26 | 51 |
| 2013 | 29 | 39 |
| 2014 | 38 | 35 |
| 2015 | 37 | 45 |
| 2016 | 44 | 44 |
| 2017 | 44 | 45 |
| 2018 | 33 | 32 |
| 2019 | 34 | 31 |
| 2020 | 32 | 36 |
| 2021 | 24 | 37 |
| 2022 | 16 | 34 |
| 2023 | 22 | 34 |
| 2024 | 23 | 38 |
| 2025 | 20 | 20 |
| 2026 | 12 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Substrate processing method and substrate processing apparatus25 Aug 2026US 12,721,058 B2Tokyo Electron Limited
- Devices having and methods of forming thermally conductive substrates4 Aug 2026US 12,702,001 B2Akash Systems, Inc.
- Methods of forming superlattice structures using nanoparticles14 Jul 2026US 12,685,041 B2ASM IP Holding B. V.
- Substrate processing method and substrate processing apparatus5 May 2026US 12,622,187 B2Tokyo Electron Limited
- Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure7 Apr 2026US 12,595,588 B2Sumitomo Chemical Company, Limited
- Systems and methods for tuning porous bandgaps to reduce thermal donor effects20 Aug 2026US 2026/0247673 A1IQE plc
- Deposition of ain on a silicon substrate and gan semiconductor transition layer structure6 Aug 2026US 2026/0231701 A1Epinovatech AB
- Systems and methods for porous backside contacts16 Jul 2026US 2026/0206313 A1IQE plc
- Semiconductor device and manufacturing method therefor16 Jul 2026US 2026/0206501 A1Jusung Engineering Co., Ltd.
- Semiconductor Exfoliation Method16 Jul 2026US 2026/0206553 A1ThinSiC Inc.
Most cited
By later US patents
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005
- Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure355US 6,201,262 B1Cree, Inc. · 2001
- Method to grow thin epitaxial films at low temperature320US 9,929,055 B2APPLIED Materials.Inc. · 2018
- Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure286US 6,187,606 B1Cree, Inc. · 2001
- Method of producing a thin layer of crystalline material281US 6,806,171 B1Silicon Wafer Technologies, Inc. · 2004