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US 12,685,041 B2Granted
Methods of forming superlattice structures using nanoparticles
AssigneeASM IP Holding B.V.
InventorJan Deckers
Life of this patent
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Abstract
Methods and systems for forming structures including a superlattice of silicon-containing epitaxial layers using nanoparticles. Exemplary methods can include forming nanoparticles in situ and depositing the nanoparticles onto a substrate surface to thereby form the epitaxial layers.
Claims21
A method of forming a superlattice structure, the method comprising:
- providing a substrate within a reaction chamber;
- forming a first silicon-containing epitaxial layer by providing first silicon-containing nanoparticles to a surface of the substrate, wherein a substrate bias power source attracts positively charged nanoparticles of the first silicon-containing nanoparticles toward the substrate by imparting a net negative bias on a substrate support within the reaction chamber;
- forming a second silicon-containing epitaxial layer overlying the first silicon-containing epitaxial layer by providing second silicon-containing nanoparticles;
- and
- repeating the steps of forming the first silicon-containing epitaxial layer and forming the second silicon-containing epitaxial layer to form a superlattice,
- wherein a composition of the first silicon-containing epitaxial layer differs from a composition of the second silicon-containing epitaxial layer.
3 more elements
Dependencies are inferred from the claim text.