Substrate processing method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsMakoto Wada, Nobutake Kabuki, Ryota Ifuku, Takashi Matsumoto
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Abstract
A substrate processing method of processing a substrate having a base film includes a loading process of loading the substrate into a processing container, a first process of performing a first plasma process in a state where the loaded substrate is held at a first position by raising substrate support pins of a stage arranged in the processing container, and a second process of performing a second plasma process while holding the substrate at a second position by lowering the substrate support pins.
Claims18
A substrate processing method of processing a substrate having a base film, the method comprising:
- a loading process of loading the substrate into a processing container;
- a first process of performing a first plasma process in a state where the loaded substrate is held at a first position by raising substrate support pins of a stage arranged in the processing container;
- and
- a second process of performing a second plasma process while holding the substrate at a second position by lowering the substrate support pins,
- wherein the second process is a process of forming a target film on the base film.
A substrate processing apparatus comprising:
- a processing container capable of accommodating a substrate having a base film;
- a stage arranged in the processing container;
- and
- a controller,
- wherein the controller is configured to control the substrate processing apparatus so as to load the substrate into the processing container,
- wherein the controller is configured to control the substrate processing apparatus so as to perform a first plasma process in a state where the loaded substrate is held at a first position by raising substrate support pins of the stage,
- wherein the controller is configured to control the substrate processing apparatus so as to perform a second plasma process while holding the substrate at a second position by lowering the substrate support pins, and
- wherein the second plasma process is a process of forming a target film on the base film.
Dependencies are inferred from the claim text.