Buffer structures for mitigation of defects at device interfaces and methods for preparing the same

A method of epitaxially forming a semiconductor device, comprising:

• loading a substrate into a process chamber;
• depositing a buffer layer over the substrate;
• depositing a delta doping layer on the buffer layer, the buffer layer and the delta doping layer forming a buffer structure;
• and
• depositing an active structure epitaxial layer on the delta doping layer.

A semiconductor device, comprising:

• a substrate;
• a buffer layer formed over the substrate;
• a delta doping layer formed over the buffer layer;
• and
• an active structure epitaxial layer formed over the delta doping layer.

A vertically-oriented semiconductor device, comprising:

• a substrate comprising silicon carbide;
• a buffer layer formed over the substrate;
• a delta doping layer formed over the buffer layer;
• and
• an active structure epitaxial layer comprising gallium oxide formed over the delta doping layer.