H10P 14/36
Characterised by treatments done before the formation of the materials
Official title: {characterised by treatments done before the formation of the materials}
H10P14/36 (Characterised by treatments done before the formation of the materials) appears on 1,614 US grants and 1,796 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,614
- Published applications
- 1,796
- Assignees
- 657
- Inventors
- 3,756
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 4 | 0 |
| 1978 | 3 | 0 |
| 1979 | 6 | 0 |
| 1980 | 3 | 0 |
| 1981 | 0 | 0 |
| 1982 | 3 | 0 |
| 1983 | 6 | 0 |
| 1984 | 7 | 0 |
| 1985 | 4 | 0 |
| 1986 | 3 | 0 |
| 1987 | 4 | 0 |
| 1988 | 8 | 0 |
| 1989 | 11 | 0 |
| 1990 | 10 | 0 |
| 1991 | 16 | 0 |
| 1992 | 7 | 0 |
| 1993 | 10 | 0 |
| 1994 | 10 | 0 |
| 1995 | 11 | 0 |
| 1996 | 12 | 0 |
| 1997 | 4 | 0 |
| 1998 | 12 | 0 |
| 1999 | 23 | 0 |
| 2000 | 20 | 0 |
| 2001 | 35 | 9 |
| 2002 | 31 | 31 |
| 2003 | 18 | 31 |
| 2004 | 23 | 42 |
| 2005 | 27 | 52 |
| 2006 | 39 | 62 |
| 2007 | 28 | 60 |
| 2008 | 27 | 46 |
| 2009 | 35 | 61 |
| 2010 | 39 | 85 |
| 2011 | 49 | 70 |
| 2012 | 65 | 96 |
| 2013 | 61 | 106 |
| 2014 | 93 | 107 |
| 2015 | 102 | 99 |
| 2016 | 114 | 104 |
| 2017 | 91 | 88 |
| 2018 | 76 | 98 |
| 2019 | 87 | 84 |
| 2020 | 85 | 100 |
| 2021 | 56 | 58 |
| 2022 | 55 | 85 |
| 2023 | 47 | 80 |
| 2024 | 50 | 68 |
| 2025 | 54 | 51 |
| 2026 | 27 | 23 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Substrate processing method and substrate processing apparatus6 Oct 2026US 12,757,648 B2Tokyo Electron Limited
- Patterned aluminum nitride composite substrate and preparation method thereof25 Aug 2026US 12,716,146 B2Peking University
- Substrate processing method and substrate processing apparatus25 Aug 2026US 12,721,058 B2Tokyo Electron Limited
- Process for producing a crystalline layer18 Aug 2026US 12,709,820 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Method for manufacturing a composite structure comprising a thin film of monocrystalline SIC on a carrier substrate of polycrystalline SIC11 Aug 2026US 12,703,929 B2Soitec
- Substrate processing method and method of manufacturing semiconductor device using the same24 Sep 2026US 2026/0293542 A1Samsung Electronics Co., Ltd.
- Film forming method and film forming apparatus10 Sep 2026US 2026/0265949 A1Tokyo Electron Limited
- Method and assembly for the removal of silicon carbide from reactor parts27 Aug 2026US 2026/0250840 A1Lpe S.P.A.
- Method for producing semiconductor substrate, semiconductor substrate, and semiconductor device20 Aug 2026US 2026/0247934 A1Shin-Etsu Handotai Co., Ltd.
- A method of forming a graphene layer structure and a graphene substrate6 Aug 2026US 2026/0226652 A1Paragraf Limited
Most cited
By later US patents
- Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device605US 6,017,779 ASeiko Epson Corporation · 2000
- Semiconductor structures and methods with high mobility and high energy bandgap materials544US 8,836,016 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Method for forming silicon-containing materials during a photoexcitation deposition process535US 7,651,955 B2APPLIED Materials.Inc. · 2010
- Method of preparing silicon carbide surfaces for crystal growth490US 4,946,547 ACree Research, Inc. · 1990
- Method for epitaxial re-growth of semiconductor region484US 8,815,712 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014