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US 8,815,712 B2Granted
Method for epitaxial re-growth of semiconductor region
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Tien Wan, You-Ru Lin, Yi-Jing Lee, Cheng-Hsien Wu, Chih-Hsin Ko, Clement Hsingjen Wann
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Abstract
A treatment is performed on a surface of a first semiconductor region, wherein the treatment is performed using process gases including an oxygen-containing gas and an etching gas for etching the semiconductor material. An epitaxy is performed to grow a second semiconductor region on the surface of the first semiconductor region.
Claims20
A method comprising:
- forming Shallow Trench Isolation (STI) regions extending from a top surface of a semiconductor substrate into the semiconductor substrate;
- etching a portion of the semiconductor substrate between opposite sidewalls of the STI regions to form a recess;
- performing a treatment on a surface of the semiconductor substrate, with the surface being in the recess, wherein the treatment is performed using process gases comprising:
- an oxygen-containing gas;
- and
- an etching gas capable of etching the semiconductor substrate;
- performing an epitaxy to grow a second semiconductor region starting from the surface;
- and
- after the performing the epitaxy, recessing the STI regions.
6 more elements
A method comprising:
- forming Shallow Trench Isolation (STI) regions extending from a top surface of a semiconductor substrate into the semiconductor substrate;
- etching a portion of the semiconductor substrate between opposite sidewalls of the STI regions to form a recess, wherein the portion of the semiconductor substrate comprises a top surface in the recess;
- performing a treatment on the top surface, wherein the treatment is performed using process gases comprising:
- an oxygen-containing gas;
- and
- an etching gas capable of etching the semiconductor substrate;
- after the treatment, performing a cleaning on the top surface;
- and
- after the treatment, performing an epitaxy to grow a semiconductor region in the recess;
- after the epitaxy, recessing the STI regions.
7 more elements
A method comprising:
- forming Shallow Trench Isolation (STI) regions extending from a first top surface of a silicon substrate into the silicon substrate;
- etching a portion of the silicon substrate between opposite sidewalls of the STI regions to form a recess, wherein the silicon substrate comprises a second top surface in the recess;
- performing a treatment on the second top surface, wherein the treatment is performed using process gases comprising CF4 and O2;
- after the treatment, performing a cleaning on the second top surface of the silicon substrate;
- performing an epitaxy to grow a germanium-containing semiconductor region in the recess, wherein the germanium-containing semiconductor region is grown from the second top surface in the recess;
- and
- forming a Fin Field-Effect Transistor (FinFET) comprising:
- after the epitaxy, recessing the STI regions, wherein a top portion of the germanium-containing semiconductor region over the recessed STI regions forms a fin;
- forming a gate dielectric on sidewalls and a top surface of the fin;
- and
- forming a gate electrode over the gate dielectric.
8 more elements
Dependencies are inferred from the claim text.