Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device

A fabrication process for fabricating a thin film semiconductor device using a single plasma enhanced chemical vapor deposition reactor, comprising:

• removing films adhered in a deposition chamber of said plasma enhanced chemical vapor deposition reactor;
• forming a passivation layer in said deposition chamber;
• placing at least one substrate in said deposition chamber;
• forming an underlevel protection layer on said in step 4, the at least one substrate;
• forming a semiconductor layer on said underlevel protection layer;
• and
• removing said at least one substrate from said deposition chamber.

A fabrication process for fabricating a thin film semiconductor device, comprising

• forming an underlevel protection layer comprising an insulating material formed on at least a portion of each of a plurality of substrates;
• placing the plurality of substrates in a deposition chamber of a low pressure chemical vapor deposition reactor, each of the plurality of substrates having a surface area S of about 90000 mm.sup.2 or larger;
• placing the plurality of substrates in the deposition chamber of the low pressure chemical vapor deposition reactor at a substrate spacing of d, where d.gtoreq.0.02.times.S.sup.1/2 ;
• and
• forming a semiconductor film on the underlevel protection layer, the semiconductor film being an active layer of a transistor.

A fabrication process for fabricating a thin film semiconductor device having an underlevel protection layer formed on at least a portion of a substrate and a semiconductor film formed on said underlevel protection layer, the underlevel protection layer comprising an insulating material and the semiconductor film being an active layer of a transistor, the process comprising:

• forming the semiconductor film on top of said underlevel protection layer in a plasma enhanced chemical vapor deposition reactor;
• then
• exposing said semiconductor film to a hydrogen plasma without breaking a vacuum of the plasma enhanced chemical vapor deposition reactor, and then
• exposing said semiconductor film to an oxygen plasma without breaking the vacuum of the plasma enhanced chemical vapor deposition reactor.

A fabrication process for fabricating a thin film semiconductor device having a semiconductor film formed on an insulating material and the insulating material formed on at least a portion of a surface of a substrate, said semiconductor film being an active layer of a transistor the process comprising:

• depositing the semiconductor film using a low pressure chemical vapor deposition at a deposition temperature less than about 450.degree. C.;
• irradiating said semiconductor film by one of optical and electromagnetic energy;
• and
• depositing a gate insulator layer after formation of said semiconductor film;
• wherein
• a deposition temperature of the gate insulator layer and a processing temperature following fabrication of the gate insulator layer are at or below 350.degree. C.

A fabrication process for fabricating a thin film semiconductor device having a semiconductor film formed on an insulating material and the insulating material formed on at least a portion of a surface of a substrate, said semiconductor film being an active layer of a transistor, the process comprising:

• forming the semiconductor film at a deposition temperature of about 350.degree. C. or less;
• irradiating said semiconductor film by one of optical and electromagnetic energy;
• and
• depositing a gate insulator layer after formation of said semiconductor film;
• wherein
• a deposition temperature of the gate insulator layer and a processing temperature following fabrication of the gate insulator layer are at or below 350.degree. C.

A fabrication process for fabricating a thin film semiconductor device having a semiconductor film formed on an insulating material and the insulating material formed on at least a portion of a surface of a substrate, said semiconductor film being an active layer of a transistor, the process comprising:

• fabricating the semiconductor film by very high frequency plasma enhanced chemical vapor deposition;
• crystallizing said semiconductor film;
• and
• performing remaining processes at a maximum processing temperature of about 350.degree. C. or less.

A fabrication process for fabricating a thin film semiconductor device having a crystalline semiconductor film formed on an insulating material and the insulating material formed on at least a portion of a surface of a substrate, said crystalline semiconductor film being an active layer of a transistor the process comprising:

• fabricating the crystalline semiconductor film by microwave plasma enhanced chemical vapor deposition;
• then
• crystallizing said semiconductor film;
• and
• performing remaining processes at a maximum processing temperature of about 350.degree. C. or less.