Process for producing a crystalline layer

Abstract

A method for manufacturing a crystal layer includes using a substrate having a surface film made of a dichalcogenide of a transition metal, designated MX2, where “M” denotes a transition metal and “X” denotes a chalcogen, the surface film including a set of monolayers bonded together by van der Waals bonds; forming a polycrystalline aluminium nitride AlN film, having grain boundaries, on the surface film; and diffusing metal elements into the surface film, through the grain boundaries of the polycrystalline aluminium nitride AlN film, the metal elements being chosen to react chemically with MX2 by a redox reaction so as to convert the van der Waals bonds into covalent bonds. A crystalline layer is formed on the polycrystalline aluminium nitride AlN film after the diffusing.

Dependencies are inferred from the claim text.