Substrate processing method and substrate processing apparatus

Abstract

A substrate processing method includes: preparing a substrate in which a silicon oxide film is formed on a surface of a silicon substrate; supplying a fluorine containing gas and a basic gas to the substrate having the silicon oxide film to remove the silicon oxide film; supplying a hydrogen gas to the substrate in which the silicon oxide film is removed and applying a thermal treatment to the substrate; supplying a mixed gas of a germanium containing gas diluted with a hydrogen gas to the substrate to which the thermal treatment is applied to perform pre-cleaning of the substrate; and forming a silicon germanium film by epitaxial growth on the substrate to which the pre-cleaning is performed.

Dependencies are inferred from the claim text.