H10P 14/24
Using chemical vapour deposition [cvd]
Official title: using chemical vapour deposition [CVD]
H10P14/24 (Using chemical vapour deposition [cvd]) appears on 7,857 US grants and 8,443 published applications in this corpus.
Search patents in H10P- Granted patents
- 7,857
- Published applications
- 8,443
- Assignees
- 1,624
- Inventors
- 12,141
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 14 | 0 |
| 1977 | 7 | 0 |
| 1978 | 14 | 0 |
| 1979 | 17 | 0 |
| 1980 | 11 | 0 |
| 1981 | 8 | 0 |
| 1982 | 13 | 0 |
| 1983 | 19 | 0 |
| 1984 | 27 | 0 |
| 1985 | 35 | 0 |
| 1986 | 37 | 0 |
| 1987 | 50 | 0 |
| 1988 | 44 | 0 |
| 1989 | 67 | 0 |
| 1990 | 48 | 0 |
| 1991 | 69 | 0 |
| 1992 | 61 | 0 |
| 1993 | 87 | 0 |
| 1994 | 81 | 0 |
| 1995 | 81 | 0 |
| 1996 | 60 | 0 |
| 1997 | 54 | 0 |
| 1998 | 86 | 0 |
| 1999 | 95 | 0 |
| 2000 | 90 | 0 |
| 2001 | 124 | 60 |
| 2002 | 135 | 189 |
| 2003 | 146 | 173 |
| 2004 | 165 | 178 |
| 2005 | 132 | 208 |
| 2006 | 138 | 252 |
| 2007 | 124 | 241 |
| 2008 | 124 | 214 |
| 2009 | 167 | 268 |
| 2010 | 220 | 335 |
| 2011 | 229 | 337 |
| 2012 | 251 | 387 |
| 2013 | 284 | 400 |
| 2014 | 365 | 411 |
| 2015 | 381 | 494 |
| 2016 | 437 | 496 |
| 2017 | 428 | 469 |
| 2018 | 406 | 453 |
| 2019 | 450 | 482 |
| 2020 | 431 | 476 |
| 2021 | 328 | 391 |
| 2022 | 283 | 378 |
| 2023 | 265 | 389 |
| 2024 | 281 | 330 |
| 2025 | 245 | 269 |
| 2026 | 143 | 163 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Enhancement-mode HEMT and manufacturing process of the same6 Oct 2026US 12,757,427 B2STMicroelectronics S,r.l.
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,472 B2Samsung Electronics Co., Ltd.
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Method of selectively forming crystalline boron-doped silicon germanium on a surface6 Oct 2026US 12,757,647 B2ASM IP Holding B. V.
- Substrate processing method and substrate processing apparatus6 Oct 2026US 12,757,648 B2Tokyo Electron Limited
- Device and method for mist chemical vapor deposition of large-size semiconductor thin film8 Oct 2026US 2026/0308759 A1Tiangong University
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Raised source/drain oxide semiconducting thin film transistor and methods of making the same8 Oct 2026US 2026/0313959 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Wide bandgap material in drift well of semiconductor device8 Oct 2026US 2026/0313993 A1
- Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device8 Oct 2026US 2026/0313998 A1Sumitomo Electric Industries, Ltd.
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Method for manufacturing thin film using atomic layer deposition885US 6,270,572 B1Samsung Electronics Co., Ltd. · 2001
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005
- Method for forming a film and method for manufacturing a thin film transistor649US 5,480,818 AFujitsu Limited · 1996