Film forming method and film forming apparatus

A film forming apparatus comprising:

• a processor;
• and
• a controller, wherein
• the controller is configured to control the processor to execute
• preparing a substrate,
• forming an amorphous silicon film over the substrate, and
• crystallizing the amorphous silicon film, wherein
• the forming of the amorphous silicon film includes
• supplying a first processing gas including a silicon-containing gas and a phosphorus-containing gas to the substrate,
• supplying a second processing gas including the silicon-containing gas and a carbon-containing gas to the substrate, and
• supplying a third processing gas including the silicon-containing gas and not including the phosphorus-containing gas and the carbon-containing gas to the substrate, and
• the supplying of the first processing gas is performed at an initial stage of or at an intermediate stage of the forming of the amorphous silicon film.