H10P 14/3211
Silicon, silicon germanium or germanium
Official title: {Silicon, silicon germanium or germanium}
H10P14/3211 (Silicon, silicon germanium or germanium) appears on 2,007 US grants and 2,014 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,007
- Published applications
- 2,014
- Assignees
- 536
- Inventors
- 3,169
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 10 | 0 |
| 1986 | 13 | 0 |
| 1987 | 21 | 0 |
| 1988 | 19 | 0 |
| 1989 | 21 | 0 |
| 1990 | 10 | 0 |
| 1991 | 15 | 0 |
| 1992 | 21 | 0 |
| 1993 | 17 | 0 |
| 1994 | 19 | 0 |
| 1995 | 20 | 0 |
| 1996 | 14 | 0 |
| 1997 | 11 | 0 |
| 1998 | 27 | 0 |
| 1999 | 31 | 0 |
| 2000 | 29 | 0 |
| 2001 | 38 | 19 |
| 2002 | 33 | 52 |
| 2003 | 50 | 65 |
| 2004 | 62 | 85 |
| 2005 | 49 | 88 |
| 2006 | 65 | 98 |
| 2007 | 51 | 92 |
| 2008 | 55 | 52 |
| 2009 | 65 | 37 |
| 2010 | 49 | 56 |
| 2011 | 52 | 63 |
| 2012 | 34 | 87 |
| 2013 | 52 | 68 |
| 2014 | 88 | 81 |
| 2015 | 70 | 77 |
| 2016 | 113 | 92 |
| 2017 | 98 | 114 |
| 2018 | 83 | 80 |
| 2019 | 98 | 120 |
| 2020 | 109 | 101 |
| 2021 | 69 | 92 |
| 2022 | 60 | 99 |
| 2023 | 92 | 107 |
| 2024 | 64 | 93 |
| 2025 | 58 | 69 |
| 2026 | 35 | 27 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Quantum heterostructures, related devices and methods for manufacturing the same29 Sep 2026US 12,751,060 B2Ecole Polytechnique de Montreal
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium15 Sep 2026US 12,740,347 B2Kokusai Electric Corporation
- Substrate processing method and substrate processing apparatus25 Aug 2026US 12,721,058 B2Tokyo Electron Limited
- Multigate transistors with capping layers and a buffer layer comprising germanium11 Aug 2026US 12,707,681 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Film forming method and film forming apparatus10 Sep 2026US 2026/0265949 A1Tokyo Electron Limited
- Systems and methods for tuning porous bandgaps to reduce thermal donor effects20 Aug 2026US 2026/0247673 A1IQE plc
- Method for producing semiconductor substrate, semiconductor substrate, and semiconductor device20 Aug 2026US 2026/0247934 A1Shin-Etsu Handotai Co., Ltd.
- Film forming method and film forming apparatus13 Aug 2026US 2026/0239897 A1Tokyo Electron Limited
- Film-forming method and film-forming apparatus23 Jul 2026US 2026/0215175 A1Tokyo Electron Limited
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method of manufacturing a substrate using an SiGe layer600US 6,607,948 B1Kabushiki Kaisha Toshiba · 2003
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Layer member forming method532US 6,984,595 B1Semiconductor Energy Laboratory Co.Ltd. · 2006
- SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn521US 7,598,513 B2Arizona Board of Regents, Acting for and on Behalf of Arizona State University, A Corporate Body Organized Under Arizona Law · 2009