Back to results
US 2026/0215175 A1Published application
Film-forming method and film-forming apparatus
AssigneeTokyo Electron Limited
InventorsRui KANEMURA, Dong LIANG, Tatsuya MIYAHARA, Yoshihiro TAKEZAWA
Life of this patent
Estimating the term…
Abstract
A film-forming method includes: preparing a substrate in which an insulating film is formed at a surface of the substrate; generating crystal nuclei containing silicon on the insulating film; and growing the generated crystal nuclei.
Claims15
A film-forming method, comprising:
- preparing a substrate in which an insulating film is formed at a surface of the substrate;
- generating crystal nuclei containing silicon on the insulating film;
- and
- growing the generated crystal nuclei.
1 more element
A film-forming apparatus, comprising:
- a processor;
- and
- a controller, wherein
- the controller is configured to control the processor to execute:
- preparing a substrate in which an insulating film is formed at a surface of the substrate;
- generating crystal nuclei containing silicon on the insulating film;
- and
- growing the generated crystal nuclei.
5 more elements
Dependencies are inferred from the claim text.