H10P 14/3212
Including tin
Official title: {including tin}
H10P14/3212 (Including tin) appears on 38 US grants and 47 published applications in this corpus.
Search patents in H10P- Granted patents
- 38
- Published applications
- 47
- Assignees
- 34
- Inventors
- 100
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 2 |
| 2009 | 2 | 1 |
| 2010 | 0 | 0 |
| 2011 | 3 | 5 |
| 2012 | 0 | 1 |
| 2013 | 0 | 2 |
| 2014 | 3 | 5 |
| 2015 | 3 | 4 |
| 2016 | 2 | 4 |
| 2017 | 3 | 3 |
| 2018 | 2 | 0 |
| 2019 | 1 | 4 |
| 2020 | 5 | 4 |
| 2021 | 3 | 3 |
| 2022 | 2 | 2 |
| 2023 | 1 | 3 |
| 2024 | 2 | 1 |
| 2025 | 0 | 2 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Multigate transistors with capping layers and a buffer layer comprising germanium11 Aug 2026US 12,707,681 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming silicon germanium structures3 Feb 2026US 12,543,516 B2ASM IP Holding B. V.
- Source/drain features of multi-gate devices22 Oct 2024US 12,125,915 B2Taiwan Semiconductor Manufacturing Company.Ltd
- III-N multichip modules and methods of fabrication20 Feb 2024US 11,908,687 B2Intel Corporation
- Methods for selective deposition of doped semiconductor material25 Apr 2023US 11,637,014 B2ASM IP Holding B. V.
- Source/drain features of multi-gate devices13 Nov 2025US 2025/0351436 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-gate transistors and methods of forming the same13 Nov 2025US 2025/0351464 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Source/drain features of multi-gate devices14 Nov 2024US 2024/0379861 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming silicon germanium structures3 Aug 2023US 2023/0245888 A1ASM IP Holding B. V.
- Source/drain features of multi-gate devices13 Apr 2023US 2023/0114789 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn521US 7,598,513 B2Arizona Board of Regents, Acting for and on Behalf of Arizona State University, A Corporate Body Organized Under Arizona Law · 2009
- Carrier channel with element concentration gradient distribution and fabrication method thereof520US 9,196,483 B1National Tsing Hua University · 2015
- Methods of forming silicon germanium tin films and structures and devices including the films473US 9,905,420 B2ASM IP Holding B. V. · 2018
- Method of epitaxial germanium tin alloy surface preparation396US 8,647,439 B2APPLIED Materials.Inc. · 2014
- Method and apparatus for forming deposited film162US 5,571,749 ACanon Kabushiki Kaisha · 1996