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US 12,543,516 B2Granted
Methods of forming silicon germanium structures
AssigneeASM IP Holding B.V.
InventorsWonjong Kim, Rami Khazaka, Michael Eugene Givens
Life of this patent
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Abstract
Methods for forming structures that include forming a heteroepitaxial layer on a substrate are disclosed. The presently disclosed methods comprise epitaxially forming a buffer layer on the substrate. The substrate has a substrate composition. The buffer layer has a buffer layer composition. The buffer layer composition is substantially identical to the substrate composition. The presently disclosed methods further comprise epitaxially forming a heteroepitaxial layer on the buffer layer. The heteroepitaxial layer has a heteroepitaxial layer composition which is different from the substrate composition.
Claims15
A method, comprising:
- providing a substrate to a reaction chamber, the substrate comprising a monocrystalline Si(110) substrate having a monocrystalline silicon Si(110) surface;
- cleaning the substrate by exposing the substrate to fluorine radicals and baking the substrate in H2-containing gas at a temperature within a range of 800° C. to 1000° C.;
- exposing the substrate to dichlorosilane gas at a flow rate within a range of 50 sccm to 300 sccm, thereby epitaxially forming a monocrystalline silicon buffer layer on the monocrystalline silicon Si(110) surface;
- and
- executing two or more deposition cycles to form two or more bilayers overlying the monocrystalline silicon buffer layer, each bilayer of the two or more bilayers comprising a SiGe layer and a Si layer, wherein the step of executing the two or more deposition cycles includes:
- (A) executing a first deposition cycle comprising, in the order given:
- a first SiGe pulse including introducing dichlorosilane as a silicon precursor and germane as a germanium precursor into the reaction chamber, and
- a first Si pulse including introducing a mixture of dichlorosilane and silane as silicon precursors into the reaction chamber;
- and
- (B) executing a second deposition cycle comprising, in the order given:
- a second SiGe pulse including introducing dichlorosilane as a silicon precursor and germane as a germanium precursor into the reaction chamber, and
- a second Si pulse including introducing a mixture of dichlorosilane and silane as silicon precursors into the reaction chamber.
9 more elements
A method, comprising:
- providing a substrate comprising a monocrystalline Si(110) substrate having a monocrystalline silicon Si(110) surface;
- cleaning the substrate by exposing the substrate to fluorine radicals and baking the substrate in H2-containing gas;
- exposing the substrate to dichlorosilane gas to thereby epitaxially form a monocrystalline silicon buffer layer on the monocrystalline silicon Si(110) surface;
- and
- executing two or more deposition cycles to form two or more bilayers overlying the monocrystalline silicon buffer layer, each bilayer of the two or more bilayers comprising a SiGe layer and a Si layer, wherein the step of executing the two or more deposition cycles includes:
- (A) executing a first deposition cycle comprising, in the order given:
- a first SiGe pulse including introducing dichlorosilane as a silicon precursor and germane as a germanium precursor into a reaction chamber, and
- a first Si pulse including introducing a mixture of dichlorosilane and silane as silicon precursors into the reaction chamber;
- and
- (B) executing a second deposition cycle comprising, in the order given:
- a second SiGe pulse including introducing dichlorosilane as a silicon precursor and germane as a germanium precursor into the reaction chamber, and
- a second Si pulse including introducing a mixture of dichlorosilane and silane as silicon precursors into the reaction chamber.
9 more elements
A method, comprising:
- providing a substrate to a reaction chamber, the substrate comprising a monocrystalline Si(110) substrate having a monocrystalline silicon Si(110) surface;
- cleaning the substrate by exposing the substrate to fluorine radicals and baking the substrate in H2-containing gas at a temperature within a range of 800° C. to 1000° C.;
- exposing the substrate to chlorosilane gas, thereby epitaxially forming a monocrystalline silicon buffer layer on the monocrystalline silicon Si(110) surface, wherein the chlorosilane gas is a member selected from the group of:
- tetrachlorosilane, trichlorosilane, dichlorosilane, monochlorosilane, chloropentamethyldisilane, dichlorotetramethyldisilane, hexachlorodisilane, pentachlorodisilane, or octachlorotrisilane;
- and
- executing two or more deposition cycles to form two or more bilayers overlying the monocrystalline silicon buffer layer, each bilayer of the two or more bilayers comprising a SiGe layer and a Si layer, wherein the step of executing the two or more deposition cycles includes:
- (A) executing a first deposition cycle comprising, in the order given:
- a first SiGe pulse including introducing a chlorosilane as a silicon precursor and a germane as a germanium precursor into the reaction chamber, wherein the chlorosilane is a member selected from the group of:
- tetrachlorosilane, trichlorosilane, dichlorosilane, monochlorosilane, chloropentamethyldisilane, dichlorotetramethyldisilane, hexachlorodisilane, pentachlorodisilane, or octachlorotrisilane, and wherein the germane is a member selected from the group of:
- monogermane, digermane, trigermane, or tetragermane, and
- a first Si pulse including introducing a mixture of dichlorosilane and silane as silicon precursors into the reaction chamber;
- and
- (B) executing a second deposition cycle comprising, in the order given:
- a second SiGe pulse including introducing a chlorosilane as a silicon precursor and a germane as a germanium precursor into the reaction chamber, wherein the chlorosilane is a member selected from the group of:
- tetrachlorosilane, trichlorosilane, dichlorosilane, monochlorosilane, chloropentamethyldisilane, dichlorotetramethyldisilane, hexachlorodisilane, pentachlorodisilane, or octachlorotrisilane, and wherein the germane is a member selected from the group of:
- monogermane, digermane, trigermane, or tetragermane, and
- a second Si pulse including introducing a mixture of dichlorosilane and silane as silicon precursors into the reaction chamber.
14 more elements
Dependencies are inferred from the claim text.