Method and apparatus for forming deposited film

A process for forming a deposited film according to claim 10, wherein the first semiconductor layer has a first conductivity type.

A process for forming a deposited film according to claim 10, wherein the second semiconductor layer formed after the cooling step is an i-type semiconductor layer.

A process for continuously forming a deposited semiconductor film on an elongated moving substrate by plasma CVD in a vacuum chambers which comprises the steps of continuously moving said substrate in a lengthwise direction in said vacuum chamber, while heating said moving substrate immediately before the inlet of a glow discharge region of said vacuum chamber at a rate of 4.degree. C./second or higher, forming said semiconductor film on said moving substrate in said glow discharge region at a deposition rate of 0.1 nm/second to 20 nm/second by plasma CVD, and cooling said moving substrate at a rate of 4.degree. C./second or higher immediately after the outlet of said glow discharge region.

An apparatus for continuously forming a deposited film on an elongated moving substrate, comprising a vacuum chamber for forming a semiconductor layer having p-type or n-type conductivity on said moving substrate and a vacuum chamber for forming a semiconductor having i-type conductivity on said semiconductor layer having p-type or n-type conductivity, which comprises heating means disposed immediately before said vacuum chamber for forming said semiconductor having i-type conductivity and cooling means disposed immediately after said vacuum chamber for forming said semiconductor having i-type conductivity.

A process for forming a deposited film comprising forming a semiconductor having i-type Conductivity on a moving semiconductor substrate having p-type or n-type conductivity by glow discharge, wherein said moving semiconductor substrate having p-type or n-type conductivity is heated at a rate of 4.degree. C./second or higher before entering a region in which said glow discharge is performed.

A process for forming a deposited film which comprises the steps of:

• forming a first semiconductor layer having p-type or n- type conductivity on a substrate, and
• forming an i-type semiconductor layer on said first semiconductor layer by microwave CVD,
• wherein the substrate on which the semiconductor layer having p-type or n-type conductivity is deposited is heated at a rate of 4.degree. C./second or more before the step of forming the i-type semiconductor layer.

A process for forming a deposited film Which comprises the steps of:

• forming an i-type semiconductor layer on a substrate by microwave CVD, and
• forming a second semiconductor layer on said i-type semiconductor layer having p-type or n-type conductivity,
• wherein the substrate on which the i-type semiconductor layer is deposited is cooled at a rate of 4.degree. C./second or more after the step of forming the i-type semiconductor layer and before the step of forming the second semiconductor layer.