Back to results
US 9,905,420 B2Granted
Methods of forming silicon germanium tin films and structures and devices including the films
AssigneeASM IP Holding B.V.
InventorsJoe Margetis, John Tolle
Life of this patent
Estimating the term…
Abstract
Methods of forming silicon germanium tin (SixGe1-xSny) films are disclosed. Exemplary methods include growing films including silicon, germanium and tin in an epitaxial chemical vapor deposition reactor. Exemplary methods are suitable for high volume manufacturing. Also disclosed are structures and devices including silicon germanium tin films.
Claims20
A method of forming a SixGe1-xSny layer on a substrate, the method comprising the steps of:
- providing a reactor having a reaction space;
- providing a substrate within the reaction space;
- providing silane coupled to the reaction space;
- providing a germanium precursor coupled to the reaction space;
- providing a tin precursor source coupled to the reaction space;
- and
- epitaxially forming a layer of SixGe1-xSny on a surface of the substrate,
- wherein a pressure in the reaction space is between about 500 Torr and about 760 Torr and a temperature in the reaction space is between about 200° C. and about 500° C.,
- wherein a ratio of a flowrate of the silane to a flowrate of the tin precursor is between about 2 to about 15, and
- wherein the SixGe1-xSny layer comprises about 2 at % to about 15 at % tin, and about 55 at % to about 65 at % germanium.
7 more elements
A method of forming a structure comprising a SixGe1-xSny layer, the method comprising the steps of:
- providing a cross-flow reactor comprising a reaction space;
- providing a substrate within the reaction space;
- and
- forming a crystalline layer comprising SixGe1-xSny on a surface of the substrate using silane and germane,
- wherein, during the step of forming, a pressure in the reaction space is between about 500 Torr and about 760 Torr and a temperature is between about 200° C. and about 500° C.,
- wherein, during the step of forming, a ratio of the silane to the germane provided to the reaction space is about 2 to about 15,
- wherein a ratio of a flowrate of the silane to a flowrate of a tin precursor is between about 2 to about 15, and
- wherein the SixGe1-xSny layer comprises about 2 at % to about 15 at % tin, and about 60 at % to about 70 at % germanium.
5 more elements
Dependencies are inferred from the claim text.