H10P 14/3206
Carbon
Official title: {Carbon, e.g. diamond-like carbon}
H10P14/3206 (Carbon) appears on 223 US grants and 293 published applications in this corpus.
Search patents in H10P- Granted patents
- 223
- Published applications
- 293
- Assignees
- 152
- Inventors
- 573
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 0 |
| 2004 | 0 | 2 |
| 2005 | 2 | 1 |
| 2006 | 1 | 4 |
| 2007 | 1 | 5 |
| 2008 | 2 | 4 |
| 2009 | 2 | 0 |
| 2010 | 5 | 5 |
| 2011 | 4 | 12 |
| 2012 | 7 | 27 |
| 2013 | 9 | 30 |
| 2014 | 16 | 15 |
| 2015 | 21 | 16 |
| 2016 | 14 | 14 |
| 2017 | 17 | 15 |
| 2018 | 17 | 12 |
| 2019 | 14 | 22 |
| 2020 | 16 | 12 |
| 2021 | 9 | 13 |
| 2022 | 8 | 18 |
| 2023 | 7 | 16 |
| 2024 | 10 | 22 |
| 2025 | 14 | 20 |
| 2026 | 10 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Integrated circuit structure and method for forming the same25 Aug 2026US 12,720,834 B2National Taiwan University
- Substrate processing method and substrate processing apparatus25 Aug 2026US 12,721,058 B2Tokyo Electron Limited
- Devices having and methods of forming thermally conductive substrates4 Aug 2026US 12,702,001 B2Akash Systems, Inc.
- SiC semiconductor substrate and fabrication method of the SiC semiconductor substrate28 Jul 2026US 12,696,508 B2Rohm Co., Ltd.
- Methods of forming superlattice structures using nanoparticles14 Jul 2026US 12,685,041 B2ASM IP Holding B. V.
- Methods for Transferring Graphene to Substrates and Related Lithographic Stacks and Laminates6 Aug 2026US 2026/0231697 A1Bard Access Systems, Inc.
- Method for making piezoelectric devices including compound semiconductor materials and a superlattice layer2 Jul 2026US 2026/0190861 A1Atomera Incorporated
- Method for manufacturing polycrystalline silicon carbide suitable for manufacturing substrates for integrated circuits, and silicon carbide obtained in this way18 Jun 2026US 2026/0168133 A1Mersen France Gennevilliers SAS
- Semiconductor structure and fabricating method thereof11 Jun 2026US 2026/0164738 A1Hon Hai Precision Industry Co., Ltd.
- Semiconductor structure and fabricating method thereof11 Jun 2026US 2026/0164741 A1Hon Hai Precision Industry Co., Ltd.
Most cited
By later US patents
- SOI methods and apparatus277US 5,514,885 A1996
- Diamond-like carbon optical waveguide59US 5,629,532 A1997
- Diamond growth method54US 5,006,203 ATexas Instruments Incorporated · 1991
- Thin film single crystal substrate45US 5,373,171 ASumitomo Electric Industries, Ltd. · 1994
- Silicon on insulator semiconductor composition containing thin synthetic diamone films43US 5,131,963 ACrystallume · 1992