Method for making piezoelectric devices including compound semiconductor materials and a superlattice layer
AssigneeAtomera Incorporated
InventorsJERRY WAYNE JOHNSON, MAREK HYTHA, ROBERT J. MEARS, NYLES WYNN CODY
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Abstract
A method for making a semiconductor device may include forming a superlattice layer on a semiconductor substrate. The superlattice layer may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming a piezoelectric layer on the superlattice layer and comprising a Group III-N semiconductor.
Claims20
A method for making a semiconductor device comprising:
- forming a superlattice layer on a semiconductor substrate, the superlattice layer comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
- and
- forming a piezoelectric layer on the superlattice layer and comprising a Group III-N semiconductor.
A method for making a semiconductor device comprising:
- forming a superlattice layer on a single crystal silicon substrate with an off-cut of 0.5° or less, the superlattice layer comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
- forming a piezoelectric layer on the superlattice layer and comprising at least one of AlN and ScN;
- and
- forming at least one electrode adjacent the piezoelectric layer.
A method for making a semiconductor device comprising:
- forming a superlattice layer on a semiconductor substrate, the superlattice layer comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions;
- and
- forming a piezoelectric layer on the superlattice layer and comprising a Group III-N semiconductor.
Dependencies are inferred from the claim text.