Semiconductor structure and fabricating method thereof

Abstract

A semiconductor structure includes a substrate, a superlattice structure disposed on the substrate, and a group III nitride structure disposed on the superlattice structure. The superlattice structure includes a plurality of first group III nitride layers and a plurality of second group III nitride layers of different materials that are alternately stacked. An upper surface of the superlattice structure has a plurality of pits, and a sidewall of the pits has a plurality of convex portions and a plurality of concave portions that are alternate. The group III nitride structure fills the pits. A method of fabricating the semiconductor structure includes the following operations. The superlattice structure is formed on the substrate. A carbon layer is deposited on the superlattice structure. The carbon layer and the superlattice structure are etched to form the pits. The group III nitride structure is formed on the superlattice structure and fills the pits.

Dependencies are inferred from the claim text.