SiC semiconductor substrate and fabrication method of the SiC semiconductor substrate

Abstract

A semiconductor substrate disclosed herein includes: an SiC single crystal substrate; a graphene layer disposed on an Si plane of the SiC single crystal substrate; an SiC epitaxial growth layer disposed above the SiC single crystal substrate via the graphene layer; and a polycrystalline Si layer disposed on an Si plane of the SiC epitaxial growth layer. The semiconductor substrate may include a graphite substrate or an silicon substrate disposed on a polycrystalline Si layer. The semiconductor substrate may include an SiC polycrystalline growth layer disposed on a C plane of the SiC epitaxial growth layer.

Dependencies are inferred from the claim text.