Semiconductor structure and fabricating method thereof

Abstract

A semiconductor structure includes a substrate, a first group III nitride structure, and a second group III nitride structure. The first group III nitride structure is disposed on the substrate, in which an upper surface of the first group III nitride structure has a plurality of pentagonal pits. The second group III nitride structure is disposed on the first group III nitride structure and fills the pentagonal pits. A method of fabricating the semiconductor structure includes the following operations. A first group III nitride structure is formed on the substrate. A carbon layer is deposited on the first group III nitride structure. The carbon layer and the first group III nitride structure are etched to form a plurality of pits. The second group III nitride structure is formed on the first group III nitride structure and fills the pits.

Dependencies are inferred from the claim text.