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US 5,006,203 AGranted
Diamond growth method
AssigneeTexas Instruments Incorporated
InventorAndrew J. Purdes
Life of this patent
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Abstract
Preferred embodiments first adjust reactor conditions to grow a diamondlike film (114) on a silicon substrate (102). Reactor conditions are then adjusted to etch the diamondlike film surface, providing a high density of diamond nucleation sites (108). Finally, the reactor conditions are adjusted to grow a uniform diamond film (116) on the conditioned diamondlike surface.
Claims9
A method of diamond film formation on a body, comprising the steps of:
- (a) forming a film of diamondlike material on a body;
- and
- (b) forming a film of diamond on said diamondlike material.
A diamond film growth method, comprising the steps of:
- (a) growing a film of diamondlike material;
- (b) selectively removing graphitic-bonded material from a surface of said film of diamondlike material;
- and
- (c) growing a film of diamond on said surface.
1 more element
Dependencies are inferred from the claim text.