H10P 14/3208
Silicon carbide
Official title: {Silicon carbide}
H10P14/3208 (Silicon carbide) appears on 435 US grants and 576 published applications in this corpus.
Search patents in H10P- Granted patents
- 435
- Published applications
- 576
- Assignees
- 215
- Inventors
- 1,056
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 3 | 0 |
| 1989 | 4 | 0 |
| 1990 | 2 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 3 | 0 |
| 1996 | 6 | 0 |
| 1997 | 3 | 0 |
| 1998 | 3 | 0 |
| 1999 | 1 | 0 |
| 2000 | 5 | 0 |
| 2001 | 3 | 1 |
| 2002 | 6 | 12 |
| 2003 | 10 | 10 |
| 2004 | 7 | 15 |
| 2005 | 9 | 14 |
| 2006 | 5 | 18 |
| 2007 | 3 | 10 |
| 2008 | 11 | 12 |
| 2009 | 7 | 16 |
| 2010 | 15 | 17 |
| 2011 | 11 | 25 |
| 2012 | 19 | 23 |
| 2013 | 19 | 24 |
| 2014 | 18 | 29 |
| 2015 | 20 | 25 |
| 2016 | 24 | 25 |
| 2017 | 17 | 17 |
| 2018 | 16 | 33 |
| 2019 | 35 | 29 |
| 2020 | 30 | 36 |
| 2021 | 18 | 21 |
| 2022 | 21 | 28 |
| 2023 | 13 | 40 |
| 2024 | 21 | 39 |
| 2025 | 29 | 41 |
| 2026 | 9 | 16 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for manufacturing a composite structure comprising a thin film of monocrystalline SIC on a carrier substrate of polycrystalline SIC11 Aug 2026US 12,703,929 B2Soitec
- Carbon-containing cap layer for doped semiconductor epitaxial layer4 Aug 2026US 12,701,762 B2APPLIED Materials.Inc.
- SiC semiconductor substrate and fabrication method of the SiC semiconductor substrate28 Jul 2026US 12,696,508 B2Rohm Co., Ltd.
- SiC substrate, SiC substrate production method, SiC semiconductor device, and SiC semiconductor device production method21 Jul 2026US 12,686,945 B2Kwansei Gakuin Educational Foundation
- SiC semiconductor substrate and fabrication method of the SiC semiconductor substrate23 Jun 2026US 12,666,884 B2Rohm Co., Ltd.
- Structure comprising a high thermal conductivity boron arsenide layer, and method of manufacture23 Jul 2026US 2026/0209990 A1
- Epitaxial layer on direct bonded substrate and method of manufacturing the same16 Jul 2026US 2026/0201604 A1STMicroelectronics International N. V.
- Super-Junction MOSFET/IGBT with MEMS Layer Transfer and WBG Drain16 Jul 2026US 2026/0206266 A1Icemos Technology Ltd.
- Semiconductor Exfoliation Method16 Jul 2026US 2026/0206553 A1ThinSiC Inc.
- Method for Altering the Carrier Concentration of a Two-Dimensional Electron Gas25 Jun 2026US 2026/0182317 A1National Chung Shan Institute of Science and Technology
Most cited
By later US patents
- Construction of thin strain-relaxed SiGe layers and method for fabricating the same421US 7,202,512 B2Industrial Technology Research Institute · 2007
- SiC wafer, SiC semiconductor device, and production method of SiC wafer359US 6,734,461 B1Kansai Electric Power C.C., Inc. · 2004
- Thin film semiconductor and process for producing the same201US 5,108,843 ARicoh Company, Ltd. · 1992
- Methods of forming a plurality of semiconductor layers using spaced trench arrays193US 6,261,929 B1North Carolina State University · 2001
- Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby169US 6,255,198 B1North Carolina State University · 2001