Epitaxial layer on direct bonded substrate and method of manufacturing the same
AssigneeSTMicroelectronics International N.V.
InventorsBjörn MAGNUSSON LINDGREN, Mathias ISACSON
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Abstract
The present disclosure is directed to a stacked assembly including a polycrystalline Silicon Carbide (SiC) substrate on which a monocrystalline SiC layer and one or more epitaxial layers are stacked. The one or more epitaxial layers are completely separated from the polycrystalline SiC substrate by the monocrystalline layer, which is stacked on the polycrystalline SiC substrate such that the monocrystalline SiC layer is between the one or more epitaxial layers and a respective surface of the polycrystalline SiC substrate. The present disclosure is further directed to one or more embodiments of methods of manufacturing one or more embodiments of the stacked assemblies.
Claims20
A method of manufacturing, comprising:
- forming a direct bonded SiC substrate including:
- forming a polycrystalline SiC substrate including a first surface and a second surface opposite to the first surface;
- forming a monocrystalline SiC substrate including a third surface and a fourth surface opposite to the third surface;
- bonding the monocrystalline SiC substrate to the polycrystalline SiC substrate;
- after bonding the monocrystalline SiC substrate to the polycrystalline SiC substrate, removing a first portion of the monocrystalline SiC substrate leaving a second portion remaining bonded to the polycrystalline SiC substrate forming a monocrystalline SiC layer stacked on the polycrystalline SiC substrate, the monocrystalline SiC layer fully and completely overlaps the polycrystalline SiC substrate;
- forming one or more epitaxial layers on the monocrystalline SiC layer stacked on the polycrystalline SiC substrate including:
- inserting the direct bonded SiC substrate into an epitaxial layer formation chamber of an epitaxial layer formation tool;
- heating up the epitaxial layer formation temperature from a first temperature to a second temperature;
- and
- introducing a carry gas into the epitaxial layer formation chamber and another gas into the epitaxial layer formation chamber forming the one or more epitaxial layers on the monocrystalline SiC layer
- after forming the one or more epitaxial layers on the monocrystalline SiC layer, removing a stacked assembly from the epitaxial layer formation chamber, and the stacked assembly includes the polycrystalline SiC substrate, the monocrystalline SiC layer, and the one or more epitaxial layers in a stacked configuration.
A device, comprising:
- a polycrystalline SiC substrate including a first surface and a second surface opposite to the first surface;
- a monocrystalline SiC layer directly and physically bonded to the second surface of the polycrystalline SiC substrate, the monocrystalline SiC layer fully and completely covering the second surface of the polycrystalline SiC substrate;
- and
- one or more epitaxial layers on the monocrystalline SiC layer, the one or more epitaxial layers are completely and fully separate and spaced apart from the polycrystalline SiC substrate by the monocrystalline SiC layer.
A device, comprising:
- a polycrystalline SiC substrate including a first surface and a second surface opposite to the first surface;
- a bonding layer on second surface of the polycrystalline SiC substrate;
- a monocrystalline SiC layer stacked on the bonding layer;
- and
- one or more epitaxial layers stacked on the monocrystalline SiC layer, the one or more epitaxial layers are separate and spaced apart from the polycrystalline SiC substrate by the monocrystalline layer and the bonding layer.
Dependencies are inferred from the claim text.