SiC substrate, SiC substrate production method, SiC semiconductor device, and SiC semiconductor device production method
AssigneesKwansei Gakuin Educational Foundation, Toyota Tsusho Corporation
InventorTadaaki Kaneko
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Abstract
The present invention addresses the issue of providing: an SiC substrate having a dislocation conversion layer that can reduce resistance; and a novel technology pertaining to SiC semiconductors. This SiC substrate and SiC semiconductor device comprise a dislocation conversion layer 12 having a doping concentration of at least 1×1015 cm−3. As a result of comprising a dislocation conversion layer 12 having this kind of doping concentration: expansion of basal plane dislocations and the occurrence of high-resistance stacking faults can be suppressed; and resistance when SiC semiconductor devices are produced can be reduced.
Claims10
A SiC substrate comprising a base substrate and a dislocation conversion layer having a doping concentration of 1×1015 cm−3 or more,
- wherein the dislocation conversion layer is a single layer formed directly above the base substrate and has a conversion rate from the basal plane dislocation to the threading edge dislocation of more than 95%, and
- wherein, in the base substrate, a subsurface damaged layer is removed and a macro-step bunching is decomposed such that the base substrate has a main surface having steps of one unit cell height.
A SiC semiconductor device comprising a base substrate and a dislocation conversion layer having a doping concentration of 1×1015 cm−3 or more,
- wherein the dislocation conversion layer is a single layer formed directly above the base substrate and has a conversion rate from the basal plane dislocation to the threading edge dislocation of more than 95%, and
- wherein, in the base substrate, a subsurface damaged layer is removed and a macro-step bunching is decomposed such that the base substrate has a main surface having steps of one unit cell height.
Dependencies are inferred from the claim text.