C30B 25/02
Epitaxial-layer growth
C30B25/02 (Epitaxial-layer growth) appears on 5,856 US grants and 6,194 published applications in this corpus.
Search patents in C30B- Granted patents
- 5,856
- Published applications
- 6,194
- Assignees
- 1,722
- Inventors
- 10,421
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 14 | 0 |
| 1978 | 12 | 0 |
| 1979 | 21 | 0 |
| 1980 | 13 | 0 |
| 1981 | 19 | 0 |
| 1982 | 23 | 0 |
| 1983 | 23 | 0 |
| 1984 | 32 | 0 |
| 1985 | 30 | 0 |
| 1986 | 32 | 0 |
| 1987 | 31 | 0 |
| 1988 | 32 | 0 |
| 1989 | 71 | 0 |
| 1990 | 62 | 0 |
| 1991 | 72 | 0 |
| 1992 | 79 | 0 |
| 1993 | 89 | 0 |
| 1994 | 105 | 0 |
| 1995 | 115 | 0 |
| 1996 | 87 | 0 |
| 1997 | 91 | 0 |
| 1998 | 129 | 0 |
| 1999 | 123 | 0 |
| 2000 | 163 | 0 |
| 2001 | 146 | 75 |
| 2002 | 161 | 237 |
| 2003 | 172 | 261 |
| 2004 | 174 | 248 |
| 2005 | 161 | 258 |
| 2006 | 150 | 229 |
| 2007 | 126 | 246 |
| 2008 | 129 | 239 |
| 2009 | 128 | 248 |
| 2010 | 190 | 276 |
| 2011 | 132 | 257 |
| 2012 | 174 | 249 |
| 2013 | 182 | 216 |
| 2014 | 203 | 229 |
| 2015 | 189 | 260 |
| 2016 | 175 | 223 |
| 2017 | 185 | 222 |
| 2018 | 186 | 229 |
| 2019 | 219 | 195 |
| 2020 | 171 | 238 |
| 2021 | 161 | 237 |
| 2022 | 157 | 271 |
| 2023 | 144 | 277 |
| 2024 | 202 | 314 |
| 2025 | 212 | 269 |
| 2026 | 149 | 191 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- C30B 25/18Characterised by the substrate2,037
- C30B 25/10Heating of the reaction chamber or the substrate1,063
- C30B 25/14Feed and outlet means for the gases1,011
- C30B 25/12Substrate holders or susceptors593
- C30B 25/16Controlling or regulating569
- C30B 25/08Reaction chambers284
- C30B 25/04Pattern deposit278
- C30B 25/06By reactive sputtering49
All 10 subgroupsShow fewer
Recent patents
- Injectors, liners, process kits, processing chambers, and related methods for gas flow in batch processing of semiconductor manufacturing6 Oct 2026US 12,753,500 B2APPLIED Materials.Inc.
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- Silicon carbide single crystal manufacturing apparatus, computing device, and manufacturing method of silicon carbide single crystal6 Oct 2026US 12,753,528 B2Denso Corporation
- Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer6 Oct 2026US 12,753,529 B2JX Advanced Metals Corporation
- Method of selectively forming crystalline boron-doped silicon germanium on a surface6 Oct 2026US 12,757,647 B2ASM IP Holding B. V.
- Device and method for mist chemical vapor deposition of large-size semiconductor thin film8 Oct 2026US 2026/0308759 A1Tiangong University
- Dynamic Seal Deposition Apparatus for Epitaxy8 Oct 2026US 2026/0308803 A1Atomic Nano Materials and Equipment Co., Ltd.
- Method and apparatus for suppression of defects during gallium oxide epitaxy8 Oct 2026US 2026/0308804 A1Kyma Technologies, Inc.
- Gallium nitride material and gallium nitride material manufacturing method8 Oct 2026US 2026/0308805 A1Sumitomo Chemical Company, Limited
- Gallium nitride crystal substrate8 Oct 2026US 2026/0308806 A1Sumitomo Chemical Company, Limited
Most cited
By later US patents
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Sequential chemical vapor deposition1,159US 5,916,365 A1999
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- CVD Processing chamber1,003US 5,558,717 AAPPLIED Materials.Inc. · 1996
- Apparatus and method for growth of a thin film940US 6,511,539 B1ASM America, Inc. · 2003