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US 2026/0308806 A1Published application
Gallium nitride crystal substrate
AssigneeSumitomo Chemical Company, Limited
InventorsToshio KITAMURA, Takashi SATO, Tetsuji FUJIMOTO
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Abstract
There is provided a gallium nitride crystal substrate, wherein a most abundant impurity element contained in the gallium nitride crystal substrate is carbon, and an absorption coefficient of the gallium nitride crystal substrate for light with a wavelength of 1050 nm is 5 cm−1 or less.
Claims18
A gallium nitride crystal substrate,
- wherein a most abundant impurity element contained in the gallium nitride crystal substrate is carbon, and
- an absorption coefficient of the gallium nitride crystal substrate for light with a wavelength of 1050 nm is 5 cm−1 or less.
A gallium nitride crystal substrate,
- wherein a most abundant impurity element contained in the gallium nitride crystal substrate is carbon, and
- an absorption coefficient of the gallium nitride crystal substrate for light with a wavelength of 450 nm is 0.5 cm−1 or more.
A gallium nitride crystal substrate,
- wherein a most abundant impurity element in the gallium nitride crystal substrate is carbon, and
- the gallium nitride crystal substrate satisfies formula (1):
- α
-
- b
- /
- α
-
- ir
- ≥
- 0.1
- (
- 1
- )
- wherein,
- αb is an absorption coefficient of the gallium nitride crystal substrate for light with a wavelength of 450 nm, and
- αir is an absorption coefficient of the gallium nitride crystal substrate for light with a wavelength of 1050 nm.
14 more elements
Dependencies are inferred from the claim text.