C30
Crystal growth
C30 (Crystal growth) appears on 17,714 US grants and 16,755 published applications in this corpus.
Search patents in C30- Granted patents
- 17,714
- Published applications
- 16,755
- Assignees
- 4,462
- Inventors
- 29,684
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 169 | 0 |
| 1977 | 148 | 0 |
| 1978 | 120 | 0 |
| 1979 | 98 | 0 |
| 1980 | 138 | 0 |
| 1981 | 154 | 0 |
| 1982 | 141 | 0 |
| 1983 | 140 | 0 |
| 1984 | 136 | 0 |
| 1985 | 184 | 0 |
| 1986 | 195 | 0 |
| 1987 | 167 | 0 |
| 1988 | 151 | 0 |
| 1989 | 218 | 0 |
| 1990 | 244 | 0 |
| 1991 | 234 | 0 |
| 1992 | 253 | 0 |
| 1993 | 254 | 0 |
| 1994 | 296 | 0 |
| 1995 | 306 | 0 |
| 1996 | 258 | 0 |
| 1997 | 252 | 0 |
| 1998 | 357 | 0 |
| 1999 | 433 | 0 |
| 2000 | 446 | 0 |
| 2001 | 427 | 198 |
| 2002 | 451 | 602 |
| 2003 | 469 | 682 |
| 2004 | 437 | 661 |
| 2005 | 397 | 703 |
| 2006 | 416 | 652 |
| 2007 | 396 | 687 |
| 2008 | 411 | 629 |
| 2009 | 358 | 714 |
| 2010 | 488 | 784 |
| 2011 | 415 | 746 |
| 2012 | 489 | 695 |
| 2013 | 520 | 705 |
| 2014 | 566 | 692 |
| 2015 | 528 | 702 |
| 2016 | 529 | 673 |
| 2017 | 558 | 618 |
| 2018 | 538 | 608 |
| 2019 | 574 | 562 |
| 2020 | 491 | 645 |
| 2021 | 453 | 602 |
| 2022 | 450 | 688 |
| 2023 | 446 | 651 |
| 2024 | 537 | 760 |
| 2025 | 520 | 617 |
| 2026 | 358 | 479 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subclasses
Granted patents
Recent patents
- Injectors, liners, process kits, processing chambers, and related methods for gas flow in batch processing of semiconductor manufacturing6 Oct 2026US 12,753,500 B2APPLIED Materials.Inc.
- Si ingot single crystal6 Oct 2026US 12,753,525 B2GlobalWafers Co., Ltd.
- Metal organic chemical vapor deposition of semi-insulating extrinsically carbon-doped group III-nitride films6 Oct 2026US 12,753,526 B2Wisconsin Alumni Research Foundation
- Hierarchical inverted/normal cobalt ferrite nano-chessboard6 Oct 2026US 12,753,527 B2Morgan State University
- Silicon carbide single crystal manufacturing apparatus, computing device, and manufacturing method of silicon carbide single crystal6 Oct 2026US 12,753,528 B2Denso Corporation
- Device and method for mist chemical vapor deposition of large-size semiconductor thin film8 Oct 2026US 2026/0308759 A1Tiangong University
- Apparatus and Method for Growing Multiple Crystals in a Single Furnace8 Oct 2026US 2026/0308799 A1Zhejiang University of Science and Technology
- Ingot growth device and method for controlling ingot growth8 Oct 2026US 2026/0308800 A1Hanwha Solutions Corporation
- Open czochralski furnace for single crystal growth8 Oct 2026US 2026/0308801 A1Boya Advanced Materials Co., Ltd.
- Metal-organic frameworks/transition metal dichalcogenides van der waals heterostructures for ultra strong microwave absorption8 Oct 2026US 2026/0308802 A1City University of Hong Kong
Most cited
By later US patents
- Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film4,076US 7,061,014 B2Japan Science and Technology Agency · 2006
- LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film3,969US 7,323,356 B2Japan Science and Technology Agency · 2008
- Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device3,939US 7,049,190 B2Sanyo Electric Co., Ltd. · 2006
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Sequential chemical vapor deposition1,159US 5,916,365 A1999