Metal organic chemical vapor deposition of semi-insulating extrinsically carbon-doped group III-nitride films

Abstract

Methods for growing semi-insulating, carbon-doped (C-doped) group III-nitride on a substrate via metal-organic chemical vapor deposition (MOCVD) are provided. In the methods, the controlled timing of the introduction of carbon dopant precursors in the MOCVD growth process results in semi-insulating group III-nitride having a high crystal quality and surface morphologies. Some embodiments of the methods use a carbon dopant precursor pre-flow step in which a carbon dopant precursor is introduced into the MOCVD reactor chamber prior to the introduction of any group III precursors and the onset of film formation (“Pre-Flow”). In other embodiments of the methods, the introduction of carbon dopant precursors is delayed until after the onset of group III-nitride film coalescence (“Delayed-Doping”).

Dependencies are inferred from the claim text.