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US 12,753,525 B2Granted
Si ingot single crystal
AssigneeGlobalWafers Co., Ltd.
InventorsKazuo Nakajima, Masami Nakanishi, Yu Sheng Su, Wen-Ching Hsu
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AssigneeGlobalWafers Co., Ltd.
InventorsKazuo Nakajima, Masami Nakanishi, Yu Sheng Su, Wen-Ching Hsu
Estimating the term…
A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.
A Si ingot single crystal, which is grown by a NOC growth method, wherein the Si ingot single crystal is grown within a Si melt without contacting a wall of a crucible, the Si ingot single crystal has a growth interface that is convex downward toward the Si melt, and a point defect of the Si ingot single crystal is 1×1014/cm3 or less.
A Si ingot single crystal, which is grown by a NOC growth method, wherein the Si ingot single crystal is grown within a Si melt without contacting a wall of a crucible, a point defect of the Si ingot single crystal is 1×1014/cm3 or less, and a COP concentration of the Si ingot single crystal is 1×107/cm3 or less.
Dependencies are inferred from the claim text.