Silicon carbide single crystal manufacturing apparatus, computing device, and manufacturing method of silicon carbide single crystal
AssigneesDenso Corporation, Toyota Jidosha Kabushiki Kaisha, MIRISE Technologies Corporation
InventorDaisuke Uematsu
Life of this patent
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Abstract
A silicon carbide single crystal manufacturing apparatus includes a pressure sensor and a computing device. The pressure sensor is configured to measure a gas pressure of a supply gas containing a silicon carbide raw material gas and introduced into a crucible through a gas introducing pipe. The computing device is configured to perform a prediction of a clogging time, which is a time until the gas introduction pipe is clogged with a solid deposit, based on the gas pressure measured by the pressure sensor a learning model created by machine learning using data calculated from results of simulations of growing the silicon carbide single crystal and results of experiments of growing the silicon carbide single crystal.
Claims12
A silicon carbide single crystal manufacturing apparatus comprising:
- a crucible constituting a reaction chamber and having a cylindrical shape with a hollow portion;
- a pedestal disposed in the hollow portion of the crucible and having one surface on which a seed crystal for growing a silicon carbide single crystal is to be disposed;
- a gas introduction pipe having a gas outlet through which a supply gas containing a silicon carbide raw material gas for growing the silicon carbide single crystal on a surface of the seed crystal is introduced into the crucible from below the pedestal;
- a heating device configured to heat and decompose the silicon carbide raw material gas;
- a pressure sensor configured to measure a gas pressure of the supply gas;
- and
- a computing device configured to perform a prediction of a clogging time, which is a time until the gas introduction pipe is clogged with a solid deposit, based on the gas pressure measured by the pressure sensor and a learning model created by machine learning using data calculated from results of simulations of growing the silicon carbide single crystal and results of experiments of growing the silicon carbide single crystal.
A computing device for a silicon carbide single crystal manufacturing apparatus, comprising a processor and a memory that stores instructions configured to, when executed by the processor and when growing a silicon carbide single crystal using the silicon carbide single crystal manufacturing apparatus in such a manner that a seed crystal is disposed on one surface of a pedestal arranged in a hollow portion of a crucible having a cylindrical shape and constituting a reaction chamber, a supply gas containing a silicon carbide raw material gas is introduced into the crucible from a gas outlet of a gas introduction pipe below the pedestal, and the silicon carbide raw material gas is thermally decomposed and supplied to a surface of the seed crystal to grow the silicon carbide single crystal, cause the processor to:
- acquire a gas pressure of the supply gas measured by a pressure sensor;
- and
- perform a prediction of a clogging time, which is a time until the gas introduction pipe is clogged with a solid deposit, based on the gas pressure measured by the pressure sensor and a learning model created by machine learning using data calculated from results of simulations of growing the silicon carbide single crystal and results of experiments of growing the silicon carbide single crystal.
A manufacturing method of a silicon carbide single crystal, comprising:
- growing a silicon carbide single crystal using a silicon carbide single crystal manufacturing apparatus by disposing a seed crystal on one surface of a pedestal arranged in a hollow portion of a crucible having a cylindrical shape and constituting a reaction chamber, introducing a supply gas containing a silicon carbide raw material gas into the crucible from a gas outlet of a gas introduction pipe below the pedestal, and thermally decomposing and supplying the silicon carbide raw material gas to a surface of the seed crystal;
- measuring a gas pressure of the supply gas with a pressure sensor;
- and
- perform a prediction of a clogging time, which is a time until the gas introduction pipe is clogged with a solid deposit, based on the gas pressure measured by the pressure sensor and a learning model created by machine learning using data calculated from results of simulations of growing the silicon carbide single crystal and results of experiments of growing the silicon carbide single crystal.
Dependencies are inferred from the claim text.